Faleev N N

Publications in Math-Net.Ru

1. Coherent and diffuse X-ray scattering from a multicomponent superlattice with quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 92:7 (2010),  483–489
2. SUPERSTRUCTURE IN OPTICALLY ANISOTROPIC AS2S3(IN) GLASS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992),  39–44
3. Молекулярно-пучковая эпитаксия однодоменного арсенида галлия на (001) кремнии, пассивированном водородом
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:2 (1992),  1–5
4. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
   
   Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
5. STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  42–44
6. ALGAAS/GAAS HETEROSTRUCTURES OBTAINED ON SILICON BY LIQUID-PHASE EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  1–3
7. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
8. INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  58–62
9. MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988),  593–597
10. LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE APPROXIMATELY-20A WIDTH
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  171–176
11. Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures Produced by MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1745–1749
12. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
13. X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2206–2211
14. Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  533–537
15. CRYSTALLIZATION OF HETEROSTRUCTURES FROM SOLUTION-FUSION SUPERCOOLING
    
    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2077–2079