Zanaveskin Maksim Leonidovich

Publications in Math-Net.Ru

1. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
2. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
3. Specifics of heat transfer in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures on sapphire
   
   Fizika Tverdogo Tela, 62:4 (2020),  635–639
4. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
5. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
6. Ohmic contacts to europium oxide for spintronic devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  38–40
7. A superconducting joint for 2G HTS tapes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  18–20
8. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
9. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
10. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
    
    Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1275–1278
11. Оптические свойства одномерных субволновых плазмонных наноструктур
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:11 (2010),  823–826