Kalinushkin Viktor Petrovich

Publications in Math-Net.Ru

1. Peculiarities of concentration quenching of Fe²⁺ luminescence in ZnSe single crystal
   
   Kvantovaya Elektronika, 53:5 (2023),  395–400
2. Study of spatial distribution of luminescence in the wavelength range of 0.44–0.75 $\mu$m in CVD-ZnSe doped with aluminum and iron
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  410–419
3. Effect of annealing in gaseous zinc on luminescence in the visible and middle IR ranges of ZnSe : Fe$^{2+}$
   
   Optics and Spectroscopy, 128:11 (2020),  1710–1716
4. Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  48–54
5. Kinetics of the luminescence decay of Fe²⁺ impurity centres in polycrystalline ZnSe upon excitation by an electron beam
   
   Kvantovaya Elektronika, 50:8 (2020),  730–733
6. Mid-IR cathodoluminescence of Fe:ZnSe
   
   Optics and Spectroscopy, 126:2 (2019),  122–125
7. Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  5–12
8. Free-electron Auger quenching of the Fe²⁺ excited state in ZnSe
   
   Kvantovaya Elektronika, 49:12 (2019),  1175–1177
9. Room- and low-temperature transmission of diffusion-doped Fe²⁺ : ZnSe polycrystal at 2940 nm
   
   Kvantovaya Elektronika, 47:2 (2017),  111–115
10. Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:11 (2016),  774–779
11. Two-photon confocal microscopy in the study of the volume characteristics of semiconductors
    
    Zhurnal Tekhnicheskoi Fiziki, 86:12 (2016),  119–123
12. IR luminescence of F²⁺ : ZnSe single crystals excited by an electron beam
    
    Kvantovaya Elektronika, 46:6 (2016),  545–547
13. Fe²⁺ : ZnSe laser pumped by a nonchain electric-discharge HF laser at room temperature
    
    Kvantovaya Elektronika, 44:2 (2014),  141–144
14. Поглощение терагерцового излучения в гетероструктурах Ge/Si(001) с квантовыми точками
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:12 (2010),  877–883
15. Superluminescent room-temperature Fe²⁺:ZnSe IR radiation source
    
    Kvantovaya Elektronika, 38:2 (2008),  95–96
16. Крупномасштабные скопления электрически активных дефектов в монокристаллах фосфида индия
    
    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  798–806
17. Dielectric properties of compensated $\mathrm{InP}$ in submillimeter range
    
    Fizika Tverdogo Tela, 32:5 (1990),  1530–1532
18. Submillimeter-range properties ($10^{11}$–$10^{12}$ Hz) of low-resistivity $\mathrm{InP}$ and $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:5 (1990),  1368–1373
19. Крупномасштабные электрически активные примесные скопления в кристаллах кремния, выращенных методом Чохральского
    
    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  264–270
20. Dielectric properties of $\mathrm{Si},\mathrm{Ge}$ and $\mathrm{GaAs}$ in the submillimeter range
    
    Fizika Tverdogo Tela, 31:8 (1989),  101–106
21. Oxygen impurity mode in the submillimeter spectra of $\mathrm{Si}$ single crystals
    
    Fizika Tverdogo Tela, 31:7 (1989),  262–264
22. Влияние быстродиффундирующих примесей на малоугловое рассеяние света в кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1308–1311
23. Влияние отжига на рассеяние света примесными скоплениями в полуизолирующих кристаллах InP : Fe и GaAs : Cr
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1112–1114
24. Low temperature relaxation of light scattering in silicon
    
    Fizika Tverdogo Tela, 29:3 (1987),  728–733
25. Effect of Sample Temperature on Light Scattering by Impurity Accumulations in Indium Phosphide
    
    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2125–2129
26. Determination of Parameters of Point Centers Forming «Weak» Impurity Aggregates in Semiconductor Materials
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1364–1368
27. Application of sounding radiation with 2 wavelength for detection of the scattering heterogeneities in semiconducting crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  129–133
28. Temperature of oxygen cloud formation in germanium
    
    Fizika Tverdogo Tela, 27:5 (1985),  1331–1333
29. Interaction of Gold with Impurity Clouds in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1902–1904
30. Aggregate of Electrically Active Impurities in Indium-Phosphide Single Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  810–813
31. Absorption of $10{.}6\mu$m laser light in electron-hole condensate in germanium
    
    Dokl. Akad. Nauk SSSR, 279:1 (1984),  88–90
32. Характер электрической активности центров, образующих примесные облака в германии
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2222–2224
33. Новый тип примесных дефектов в полуизолирующем арсениде галлия
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1363–1366
34. Temperature Dependence of Low-Angle Light Scattering by Pure-Silicon Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  938–940
35. Примесные облака и микродефекты в кремнии, выращенном методом Чохральского
    
    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2137–2142
36. Источники образования примесных облаков в германии
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  683–685