Nikitin V A

Publications in Math-Net.Ru

1. Кинетика СВЧ фотопроводимости в подложках Si с внутренним геттером и бездефектной зоной
   
   Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  942–948
2. Электрические свойства легированных германием монокристаллов кремния, подвергнутых термообработке
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1146–1149
3. CHANGE OF THE CONCENTRATION OF ADHESION CENTERS AND LIFETIME OF NONEQUILIBRIUM CARRIERS IN SILICON DURING FORMATION OF INTERNAL GETGERS - STAGE NONDESTRUCTION CONTROL OF GETTERING
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  979–982
4. Effect of Trapping Levels on the Recombination of Excess Carriers in Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  182–184
5. Study of Silicon Spalled Surface by SHF and Optical-Reflection Methods
   
   Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  348
6. Dependence of nonequilibrium carrier recombination in silica on the time of thermal-oxidation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1166–1168
7. Effect of internal and surface gettering processes on the lifetime of non-equilibrium carriers in silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985),  1145–1146
8. Исследование рекомбинации неравновесных носителей в кремнии методом СВЧ
   
   Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2160–2165
9. Electron-microscopic study of glassy semiconductor microstructures in the $\mathrm{Ge}$–$\mathrm{Se}$ system
   
   Fizika Tverdogo Tela, 25:10 (1983),  2923–2929
10. PRODUCTION OF BAND WAVEGUIDES WITH A PREDICTABLE CROSS-SECTION SHAPE BY THE ELECTROSTIMULATED DIFFUSION METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  2088–2090