Arapov Yurii Grigor'evich

Publications in Math-Net.Ru

1. Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1447–1454
2. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  281
3. Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1669–1674
4. Проводимость $n$-Hg$_{1-x}$Cd$_{x}$Te в магнитных полях, превышающих поле перехода металл$-$диэлектрик
   
   Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  687–691
5. Резонансы гальваномагнитных эффектов в Hg$_{1-x}$Cd$_{x}$Te в сильных электрических полях
   
   Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2203–2209
6. Влияние примесных дырок на диэлектрическую проницаемость бесщелевых полупроводников
   
   Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  893–896
7. Relaxation of Hot-Electron Energy in $p$-Hg$_{1-x$Cd$_{x}$Te} and $p$-Hg$_{1-x$Mn$_{x}$Te} Gapless Semiconductors at Helium Temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  855–861
8. Metal–Dielectric Transition in Hg$_{0.8}$Cd$_{0.2}$Te Induced by a Magnetic Field
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  792–797
9. Static Permittivity of Hg$_{1-x}$Cd$_x$Te Gapless Semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  462–467
10. Photoconduction of Warm Electrons in Hg$_{1-x}$Cd$_{x}$Te Gapless Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1185–1190
11. Локализация электронов в магнитном поле в $n$-Hg$_{0.8}$Cd$_{0.2}$Te
    
    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1392–1396
12. Влияние донорно-акцепторных пар на подвижность электронов в бесщелевых полупроводниках Hg$_{1-x}$Cd$_{x}$Te
    
    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  24–26