Krasil’nikova Ludmila Vladimirovna

Publications in Math-Net.Ru

1. Isotopically purified Si/SiGe epitaxial structures for quantum computing
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
2. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
3. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
4. Emission properties of heavily doped epitaxial indium-nitride layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
5. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
6. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
7. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
8. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617