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Publications in Math-Net.Ru
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Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772
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Emission properties of heavily doped epitaxial indium-nitride layers
Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400
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Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598
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Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268
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Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918
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Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 614–617
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