Bagaev Viktor Sergeevich

Publications in Math-Net.Ru

1. Nonstandard features of the interaction of single luminescent centers formed by partial dislocation cores in CdTe and ZnSe with longitudinal optical phonons
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 114:2 (2021),  96–101
2. Emission spectrum and stability of two types of electron–hole liquid in shallow Si/Si$_{1-x}$Ge$_{x}$Si quantum wells
   
   Fizika Tverdogo Tela, 62:4 (2020),  529–536
3. Anti-Stokes luminescence of bulk and thin-film $\beta$-InSe under infrared optical excitation
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:3 (2020),  160–164
4. Visible emission from a dense biexciton gas in SiGe/Si quantum wells under external anisotropic strain
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018),  371–377
5. Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:4 (2016),  229–234
6. Fine structure of the emission spectrum of a two-dimensional electron-hole liquid in SiGe/Si quantum wells
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:3 (2016),  161–166
7. Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  108–113
8. Superradiance of a degenerate exciton gas in semiconductors with indirect fundamental absorption edge
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:5 (2014),  343–348
9. Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 94:1 (2011),  63–67
10. Anomalous phonon wind effect on the lateral exciton migration in ultrathin quantum well CdTe/ZnTe
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 73:8 (2001),  451–455
11. Some peculiarities in optical absorption spectra of very thin semiconductor films
    
    Fizika Tverdogo Tela, 26:12 (1984),  3611–3617
12. Semiconducting quantum generator with the $p$–$n$ transition in $\mathrm{GaAs}$
    
    Dokl. Akad. Nauk SSSR, 150:2 (1963),  275–278