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Publications in Math-Net.Ru
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Formation of $ncl$-Si in the amorphous matrix $a$-SiO$_{x}$ : H located near the anode and on the cathode, using a time-modulated DC plasma with the (SiH$_4$–Ar–O$_{2}$) gas phase ($C_{\mathrm{O}_2}$ = 21.5 мол%)
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1547–1556
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Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1137–1144
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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 538–548
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Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 212–217
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Luminescence of amorphous silicon nanoclusters
Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011), 402–405
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PHOTOELECTRIC PROPERTIES OF CDGEP2 STRUCTURES AND ITS INP BINARY ANALOG
Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990), 174–176
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PHOTOVOLTAIC EFFECT IN PARA-CDO-CDGEP2 BARRIERS
Zhurnal Tekhnicheskoi Fiziki, 58:7 (1988), 1415–1419
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Поляризационная фоточувствительность анизотипных структур
$n$-SiO$_{2}{-}p$-CdGeP$_{2}\langle\text{Ga}\rangle$
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1115–1116
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Дихроизм кристаллов MnIn$_{2}$Te$_{4}$ и фотоплеохроизм
структур на их основе
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1101–1104
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PHOTOELECTRIC PROPERTIES OF THE PARA-SNO2-PARA-CDGEP2(IN) ISO-TYPE
HETEROJUNCTION
Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986), 1989–1993
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