Timofeev Vyacheslav Alekseevich

Publications in Math-Net.Ru

1. Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
   
   Fizika Tverdogo Tela, 66:11 (2024),  1871–1878
2. Investigation of the effect of annealing and composition on infrared photoluminescence of GeSiSn/Si multiple quantum well nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  765–769
3. Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  371–374
4. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
5. Splitting of frequencies of optical phonons in tensile-strained germanium layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017),  305–310
6. Valence-band offsets in strained SiGeSn/Si layers with different tin contents
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  342–347
7. Photoluminescence enhancement in double Ge/Si quantum dot structures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016),  845–848
8. Strained multilayer structures with pseudomorphic GeSiSn layers
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
9. Bidirectional photocurrent of holes in layers of Ge/Si quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014),  99–103
10. Intraband optical transitions of holes in strained SiGe quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013),  180–184
11. Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  806–810