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Publications in Math-Net.Ru
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Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$)O$_3$ ferroelectric substrate
Pis'ma v Zh. Èksper. Teoret. Fiz., 95:4 (2012), 216–218
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Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation
Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 561–564
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Междузонные ИК переходы в одноосно деформированном узкощелевом
полупроводнике
Fizika i Tekhnika Poluprovodnikov, 24:7 (1990), 1227–1233
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Ударная ионизация в дырочном антимониде индия
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1117–1119
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Collisional Ionization in Indium Antimonide
Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1835–1840
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Auger Recombination of Holes via Deep Acceptor in $n$-Type GaSb
Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 942–944
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On impurity auger-recombination
Fizika Tverdogo Tela, 27:8 (1985), 2313–2319
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Auger Recombination via Donors
Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1715–1717
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Impurity Auger Recombination in Silicon
Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 697–702
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Auger Recombination of Holes via Deep Donors in $n$-Type InSb
Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 441–445
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Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors
Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 43–48
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