Soltamov Viktor Andreevich

Publications in Math-Net.Ru

1. Высокотемпературная диффузия бериллия в AlN как направление решения проблемы легирования $p$-типа и снижения интенсивности оптического поглощения
   
   Fizika Tverdogo Tela, 67:6 (2025),  940–945
2. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies
   
   Fizika Tverdogo Tela, 67:1 (2025),  114–120
3. Color centers with reproducible spectral characteristics in hexagonal boron nitride (hBN) irradiated with protons
   
   Fizika Tverdogo Tela, 66:10 (2024),  1820–1823
4. Creating NV$^-$-defects in silicon carbide 6$H$–SiC by irradiation with high-energy electrons
   
   Fizika Tverdogo Tela, 66:4 (2024),  537–541
5. Creation of optically addressable spin centers in hexagonal boron nitride by proton irradiation
   
   Fizika Tverdogo Tela, 64:8 (2022),  1033–1037
6. High-temperature diffusion of the acceptor impurity Be in AlN
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  275–278
7. High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  813–819
8. Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies
   
   Fizika Tverdogo Tela, 60:4 (2018),  641–659
9. Physical foundations of an application of scanning probe with spin centers in SiC for the submicron quantum probing of magnetic fields and temperatures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 108:9 (2018),  643–649
10. An optical quantum thermometer with submicron resolution based on the cross-relaxation phenomenon of spin levels
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  34–41
11. Influence of neutron irradiation on etching of SiC in KOH
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1104–1106
12. An optical quantum thermometer with submicrometer resolution based on the level anticrossing phenomenon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  70–77
13. Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice
    
    Fizika Tverdogo Tela, 58:12 (2016),  2319–2335
14. Spin centres in SiC for all-optical nanoscale quantum sensing under ambient conditions
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  83
15. An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  22–29
16. Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide
    
    UFN, 186:6 (2016),  678–684
17. Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature
    
    Fizika Tverdogo Tela, 57:5 (2015),  877–885
18. Diagnostics of NV defect structure orientation in diamond using optically detected magnetic resonance with a modulated magnetic field
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:12 (2015),  40–47
19. Temperature-scanned magnetic resonance and the evidence of two-way transfer of a nitrogen nuclear spin hyperfine interaction in coupled NV–N pairs in diamond
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012),  477–480