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Publications in Math-Net.Ru
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Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146
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Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295
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GaAs/GaP quantum-well heterostructures grown on Si substrates
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171
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Type-I indirect-gap semiconductor heterostructures on (110) substrates
Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 710–717
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Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1373–1379
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Spinodal decomposition in InSb/AlAs heterostructures
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1280–1285
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Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1565–1568
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Formation of low-dimensional structures in the InSb/AlAs heterosystem
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1282–1288
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Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016), 785–791
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Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy
Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180
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Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots
Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86
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Novel self-assembled quantum dots in the GaSb/AlAs heterosystem
Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012), 601–603
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