Tsatsul'nikov Andrei Fedorovich

Publications in Math-Net.Ru

1. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
2. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
3. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
4. Calculation of the Ga+ FIB ion dose distribution by SEM image
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
5. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
6. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
   
   Fizika Tverdogo Tela, 61:12 (2019),  2333
7. Insulating GaN epilayers co-doped with iron and carbon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
8. Selective epitaxial growth of III–N structures using ion-beam nanolithography
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
9. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
10. Photonic-crystal waveguide for the second-harmonic generation
    
    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
11. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
12. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
13. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
14. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
15. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
16. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
17. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
18. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
19. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858
20. Vertical-cavity emitting devices with quantum-dot structures
    
    UFN, 171:8 (2001),  855–857
21. Фотолюминесценция, связанная с центрами Au$_{\text{Ga}}$ в GaAs : Au
    
    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  508–512
22. An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:9 (1990),  2667–2676
23. Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression
    
    Fizika Tverdogo Tela, 30:5 (1988),  1459–1465