RUS  ENG
Full version
PEOPLE

Tsatsul'nikov Andrei Fedorovich

Publications in Math-Net.Ru

  1. Control of elastic stress during the growth of heterostructures (Al)GaN/SiC

    Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  315–318
  2. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
  3. Czochralski growth of semi-insulating bulk iron-doped $\beta$-Ga$_2$O$_3$ crystals with a resistivity of 160 G$\Omega$ $\cdot$ cm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  57–60
  4. InP/InGaAs-based avalanche photodiodes for single-photon detectors in the 1550 nm spectral range

    Kvantovaya Elektronika, 55:7 (2025),  455–459
  5. Effect of disorder on the optical properties of resonant Bragg structures based on III–N

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  594–600
  6. Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  582–585
  7. Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  552–555
  8. Study of growth conditions effect on GaN doping with carbon from propane and methane

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
  9. Stress analysis of GaN-based heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  546–550
  10. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
  11. Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  44–47
  12. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
  13. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
  14. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
  15. Calculation of the Ga+ FIB ion dose distribution by SEM image

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
  16. The influence of reactor pressure on the properties of GaN layers grown by MOVPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
  17. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography

    Fizika Tverdogo Tela, 61:12 (2019),  2333
  18. Insulating GaN epilayers co-doped with iron and carbon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
  19. Selective epitaxial growth of III–N structures using ion-beam nanolithography

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
  20. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
  21. Photonic-crystal waveguide for the second-harmonic generation

    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
  22. InGaN/GaN light-emitting diode microwires of submillimeter length

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
  23. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
  24. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
  25. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
  26. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
  27. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
  28. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
  29. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
  30. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
  31. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
  32. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
  33. Optical lattices of excitons in InGaN/GaN quantum well systems

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  6–10
  34. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
  35. MOVPE of III–N LED structures with short technological process

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
  36. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
  37. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  1–8
  38. Resonance Bragg structure with double InGaN quantum wells

    Fizika Tverdogo Tela, 55:9 (2013),  1706–1708
  39. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419
  40. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  36–47
  41. InGaN/GaN heterostructures grown by submonolayer deposition

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
  42. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
  43. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
  44. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
  45. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  274–279
  46. Specific features of gallium nitride selective epitaxy in round windows

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  95–102
  47. Study of tunneling transport of carriers in structures with an InGaN/GaN active region

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1615–1623
  48. Formation of composite InGaN/GaN/InAlN quantum dots

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
  49. Structural and optical properties of InAlN/GaN distributed Bragg reflectors

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
  50. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  955–961
  51. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
  52. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
  53. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
  54. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
  55. High growth rate of AlN in a planetary MOVPE reactor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  33–39
  56. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95
  57. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  58. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  59. Фотолюминесценция, связанная с центрами Au$_{\text{Ga}}$ в GaAs : Au

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  508–512
  60. An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$

    Fizika Tverdogo Tela, 32:9 (1990),  2667–2676
  61. Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression

    Fizika Tverdogo Tela, 30:5 (1988),  1459–1465

© Steklov Math. Inst. of RAS, 2026