Tsatsul'nikov Andrei Fedorovich

Publications in Math-Net.Ru

1. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
2. Czochralski growth of semi-insulating bulk iron-doped $\beta$-Ga$_2$O$_3$ crystals with a resistivity of 160 G$\Omega$ $\cdot$ cm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  57–60
3. Effect of disorder on the optical properties of resonant Bragg structures based on III–N
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  594–600
4. Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  582–585
5. Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  552–555
6. Study of growth conditions effect on GaN doping with carbon from propane and methane
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
7. Stress analysis of GaN-based heterostructures on silicon substrates
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  546–550
8. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
9. Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  44–47
10. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
11. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
12. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
13. Calculation of the Ga+ FIB ion dose distribution by SEM image
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
14. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
15. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
    
    Fizika Tverdogo Tela, 61:12 (2019),  2333
16. Insulating GaN epilayers co-doped with iron and carbon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
17. Selective epitaxial growth of III–N structures using ion-beam nanolithography
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
18. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
19. Photonic-crystal waveguide for the second-harmonic generation
    
    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
20. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
21. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
22. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
23. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
24. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
25. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
26. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
27. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
28. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
    
    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
29. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
30. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
31. Optical lattices of excitons in InGaN/GaN quantum well systems
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  6–10
32. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
33. MOVPE of III–N LED structures with short technological process
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
34. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
35. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  1–8
36. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419
37. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  36–47
38. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858
39. Vertical-cavity emitting devices with quantum-dot structures
    
    UFN, 171:8 (2001),  855–857
40. Фотолюминесценция, связанная с центрами Au$_{\text{Ga}}$ в GaAs : Au
    
    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  508–512
41. An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:9 (1990),  2667–2676
42. Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression
    
    Fizika Tverdogo Tela, 30:5 (1988),  1459–1465