Lundin Vsevolod Vladimirovich

Publications in Math-Net.Ru

1. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
2. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
3. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
4. Calculation of the Ga+ FIB ion dose distribution by SEM image
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
5. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
6. A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54
7. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
   
   Fizika Tverdogo Tela, 61:12 (2019),  2333
8. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
9. Insulating GaN epilayers co-doped with iron and carbon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
10. Selective epitaxial growth of III–N structures using ion-beam nanolithography
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
11. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
12. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
13. Photonic-crystal waveguide for the second-harmonic generation
    
    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
14. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
15. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
16. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
17. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
18. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
19. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1064–1069
20. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
21. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
22. Metamaterial for efficient second harmonic generation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  40–48
23. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
24. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
25. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858