Shmidt Nataliya Mikhailovna

Publications in Math-Net.Ru

1. Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  45–48
2. Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  555–561
3. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
4. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
5. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
6. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
7. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
8. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
9. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
10. Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:5 (2003),  270–274
11. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858
12. ZN DIFFUSION IN INP AND ZN-BASED SOLID-SOLUTIONS FROM POLYMER FILM DIFFUSANTS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:13 (1992),  35–38
13. Исследование влияния химической обработки InP на скорость поверхностной рекомбинации методом комбинационного рассеяния света
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2177–2180
14. Исследование кинетики фотопроводимости в коротких фоторезисторах на основе InP : Fe
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2167–2171
15. Измерение ВАХ InGaAs при помощи пикосекундной электрооптической стробирующей установки
    
    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  848–854
16. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
17. Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1498–1501
18. Removal of a Nonequilibrium Plasma from Short InP : Fe Photoresistors by an Electric Field
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  70–74
19. Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1059–1062
20. FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2064–2066
21. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP
    
    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
22. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP
    
    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
23. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
24. Высокоэффективный фотодетектор для ультрафиолетового излучения
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519