|
|
Publications in Math-Net.Ru
-
On the physical nature of magnetobiological effects
Kvantovaya Elektronika, 36:8 (2006), 691–701
-
Diagnostics of ortho and para water isomers with tunable diode lasers
Kvantovaya Elektronika, 35:3 (2005), 205–206
-
Application of tunable diode lasers for a highly sensitive analysis of gaseous biomarkers in exhaled air
Kvantovaya Elektronika, 32:11 (2002), 987–992
-
Laser orthomolecular medical diagnostics
UFN, 170:4 (2000), 458–462
-
Электрические свойства легированных германием монокристаллов кремния,
подвергнутых термообработке
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1146–1149
-
CHANGE OF THE CONCENTRATION OF ADHESION CENTERS AND LIFETIME OF
NONEQUILIBRIUM CARRIERS IN SILICON DURING FORMATION OF INTERNAL GETGERS
- STAGE NONDESTRUCTION CONTROL OF GETTERING
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 979–982
-
Effect of Trapping Levels on the Recombination of Excess Carriers in Silicon
Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 182–184
-
Study of Silicon Spalled Surface by SHF and Optical-Reflection Methods
Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 348
-
Dependence of nonequilibrium carrier recombination in silica on the time of thermal-oxidation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1166–1168
-
Effect of internal and surface gettering processes on the lifetime of non-equilibrium carriers in silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985), 1145–1146
-
Исследование рекомбинации неравновесных носителей в кремнии методом
СВЧ
Fizika i Tekhnika Poluprovodnikov, 18:12 (1984), 2160–2165
-
On the equilibrium in the system: free carriers – free excitons – electron-hole dropes in $\mathrm{Ge}$ at $4.2$ К
Dokl. Akad. Nauk SSSR, 250:6 (1980), 1371–1374
-
Excitation of nonequilibrium carriers in germanium and silicon by the $\mathrm{CO}_2$-laser radiation
Dokl. Akad. Nauk SSSR, 232:6 (1977), 1296–1298
© , 2024