Shernyakov Yury Mikhailovich

Publications in Math-Net.Ru

1. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
   
   Kvantovaya Elektronika, 52:7 (2022),  593–596
2. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
3. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
4. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
5. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
6. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
7. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
8. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
9. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
10. Investigation of the modified structure of a quantum cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
11. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
12. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
13. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
    
    UFN, 169:4 (1999),  459–464
14. Фотолюминесценция аморфных пленок $a$-Si$_{1-x}$C$_{x}$ : H
    
    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  710–716
15. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
16. Quantum-dimensional laser with single heterojunction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
17. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
18. Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure
    
    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  502–506
19. Спектральная зависимость коэффициента лавинного умножения в варизонной $p{-}n$-структуре
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  753–755