Maksimov Mikhail Viktorovich

Publications in Math-Net.Ru

1. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
   
   Kvantovaya Elektronika, 52:7 (2022),  593–596
2. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
3. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
4. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
5. Impact of substrate in calculating the electrical resistance of microdisk lasers
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
6. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
7. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
8. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
9. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
10. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range
    
    Optics and Spectroscopy, 128:1 (2020),  110–117
11. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
12. Parasitic recombination in a laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
13. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
14. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
15. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
16. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
17. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
18. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
19. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
20. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
21. Semiconductor laser quasi-array with phase-locked single-mode emitting channels
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1444–1447
22. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
23. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
24. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
25. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
26. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
27. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
28. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
29. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
30. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
31. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
32. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
33. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
34. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
35. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
36. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
37. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
38. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
39. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
40. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
41. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
42. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
43. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
44. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
45. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
46. Whispering-gallery mode microcavity quantum-dot lasers
    
    Kvantovaya Elektronika, 44:3 (2014),  189–200
47. Ordered quantum-dot arrays in semiconducting matrices
    
    UFN, 166:4 (1996),  423–428