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Maksimov Mikhail Viktorovich

Publications in Math-Net.Ru

  1. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
  2. Dependence of beam propagation ratio on waveguide design in edge-emitting diode lasers

    Optics and Spectroscopy, 132:5 (2024),  520–523
  3. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm

    Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
  4. Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  57–60
  5. Dependence of lasing wavelength on optical loss in quantum dot laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
  6. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
  7. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide

    Optics and Spectroscopy, 131:11 (2023),  1483–1485
  8. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
  9. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
  10. Model for speed performance of quantum-dot waveguide photodiode

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
  11. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
  12. Information encoding using two-level generation in a quantum dot laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
  13. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
  14. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
  15. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
  16. Internal loss in diode lasers with quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
  17. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
  18. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures

    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  97–100
  19. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
  20. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
  21. High-speed photodetectors based on InGaAs/GaAs quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
  22. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots

    Kvantovaya Elektronika, 52:7 (2022),  593–596
  23. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
  24. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
  25. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
  26. Impact of substrate in calculating the electrical resistance of microdisk lasers

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
  27. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
  28. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
  29. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
  30. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
  31. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range

    Optics and Spectroscopy, 128:1 (2020),  110–117
  32. Ultimate lasing temperature of microdisk lasers

    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
  33. Parasitic recombination in a laser with asymmetric barrier layers

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
  34. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
  35. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
  36. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
  37. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
  38. The effect of self-heating on the modulation characteristics of a microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
  39. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
  40. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
  41. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
  42. Semiconductor laser quasi-array with phase-locked single-mode emitting channels

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1444–1447
  43. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
  44. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
  45. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
  46. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
  47. Energy consumption for high-frequency switching of a quantum-dot microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
  48. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
  49. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
  50. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
  51. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
  52. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
  53. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
  54. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
  55. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
  56. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
  57. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
  58. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
  59. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
  60. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
  61. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
  62. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
  63. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
  64. Optical properties of hybrid quantum-confined structures with high absorbance

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
  65. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
  66. Microdisk injection lasers for the 1.27-$\mu$m spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
  67. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
  68. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
  69. Whispering-gallery mode microcavity quantum-dot lasers

    Kvantovaya Elektronika, 44:3 (2014),  189–200
  70. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428

© Steklov Math. Inst. of RAS, 2025