Maksimov Mikhail Viktorovich

Publications in Math-Net.Ru

1. Пространственное распределение тока в полупроводниковых оптических усилителях с гребневым волноводом и активной областью на основе квантовых яма-точек
   
   Optics and Spectroscopy, 133:10 (2025),  1063–1067
2. Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  310–313
3. Current- and light-controlled switching of lasing wavelengths in InAs/InGaAs/GaAs quantum dot lasers for application in neuromorphic photonics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  45–49
4. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
5. Dependence of beam propagation ratio on waveguide design in edge-emitting diode lasers
   
   Optics and Spectroscopy, 132:5 (2024),  520–523
6. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
7. Spectral characteristics of an optically coupled pair of stripe lasers based on InAs/InGaAs/GaAs quantum dots
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  57–60
8. Dependence of lasing wavelength on optical loss in quantum dot laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
9. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
10. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
    
    Optics and Spectroscopy, 131:11 (2023),  1483–1485
11. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
12. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
13. Model for speed performance of quantum-dot waveguide photodiode
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
14. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
15. Information encoding using two-level generation in a quantum dot laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
16. Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1148–1153
17. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1144–1147
18. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
19. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
20. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
21. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  97–100
22. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
23. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
24. High-speed photodetectors based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
25. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
26. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
27. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
28. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
29. Impact of substrate in calculating the electrical resistance of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
30. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
31. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
32. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
33. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
34. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range
    
    Optics and Spectroscopy, 128:1 (2020),  110–117
35. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
36. Parasitic recombination in a laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
37. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
38. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
39. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
40. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
41. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
42. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
43. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
44. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
45. Semiconductor laser quasi-array with phase-locked single-mode emitting channels
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1444–1447
46. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
47. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
48. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
49. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
50. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
51. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
52. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
53. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
54. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
55. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
56. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
57. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
58. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
59. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
60. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
61. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
62. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
63. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
64. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
65. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
66. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
67. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
68. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
69. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
70. Spatial hole burning and spectral stability of a quantum-dot laser
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1546–1552
71. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
72. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960
73. Thermal resistance of ultra-small-diameter disk microlasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
74. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
75. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
76. Lasing in microdisks of ultrasmall diameter
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1666–1670
77. Multilayer quantum-dot arrays of high bulk density
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1487–1491
78. Whispering-gallery mode microcavity quantum-dot lasers
    
    Kvantovaya Elektronika, 44:3 (2014),  189–200
79. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
80. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1406–1413
81. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
82. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
83. High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  684–689
84. Optical anisotropy of InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
85. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
86. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
87. Device characteristics of long-wavelength lasers based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1249–1273
88. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
89. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
90. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  701–707
91. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  241–246
92. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
93. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
94. Interaction of polarized light with comb-shaped metal-coated nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  34–40
95. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  10–16
96. Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:2 (2012),  25–31
97. Optical anisotropy of InAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30
98. Ordered quantum-dot arrays in semiconducting matrices
    
    UFN, 166:4 (1996),  423–428