Chepurnov Viktor Ivanovich

Publications in Math-Net.Ru

1. Efficiency of activated nano-heterojunctions on silicon and silicon carbide substrates
   
   Comp. nanotechnol., 10:4 (2023),  91–102
2. Efficiency determination problems for SiC*/Si microstructures and contact formation
   
   Comp. nanotechnol., 8:3 (2021),  59–68
3. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  421–425
4. Associates of dot defects of various nature in $\mathrm{SiC}$-phase of semiconductor heterostructure of $\mathrm{SiC//Si}$, received by endotaksiya method
   
   Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2014, no. 7(118),  145–162
5. Distribution of point defects in the Si-faze including Sic-faze, formed by endotaxe method of semiconductor heterostructures
   
   Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2012, no. 9(100),  164–179
6. Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors
   
   Vestnik Samarskogo Gosudarstvennogo Universiteta. Estestvenno-Nauchnaya Seriya, 2011, no. 2(83),  179–183