Nikishin E V

Publications in Math-Net.Ru

1. Methods for bringing the time dependence of photocurrent resistor to the shape of the optical pulses' intensity, the repetition frequency of which is higher than the boundary frequency of the photodetector
   
   University proceedings. Volga region. Physical and mathematical sciences, 2024, no. 1,  126–137
2. Numerical study of the effect of surface recombination on nonlinear and phase distortions arising during the restoration of the optical signal shape
   
   Zhurnal SVMO, 24:2 (2022),  215–227
3. On the influence of light intensity on the limits of applicability of modulated optical signals recovery method
   
   Zhurnal SVMO, 21:3 (2019),  363–372
4. Distortion of high frequency optical signals photodetectors fabricated on silicon doped with gold.
   
   Zhurnal SVMO, 17:2 (2015),  76–80
5. Distortion that occurs when you restore a high-frequency optical pulses (silicon doped with indium)
   
   Zhurnal SVMO, 17:1 (2015),  105–110
6. On the applicability boundaries of the restoration method for the temporal shape of modulated optical signals with a frequency higher than the boundary frequency of a photoresistor
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1526–1529
7. Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  175–178
8. Investigation of the kinetics of nonequilibrium carriers in semiconductors under periodic optical excitation.
   
   Zhurnal SVMO, 16:2 (2014),  85–89
9. The use of silicon alloyed with gold, to determine the shape of the optical signal
   
   Zhurnal SVMO, 16:1 (2014),  140–144
10. The kinetics of photoconductivity under interband excitation with surface recombination
    
    Zhurnal SVMO, 15:1 (2013),  112–120
11. The kinetics of photoconductivity when excited by high-frequency pulses
    
    University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 4,  242–250
12. On changes in the lifetimes of charge carriers during pulsed photoexcitation in silicon with deep impurity centers
    
    University proceedings. Volga region. Physical and mathematical sciences, 2011, no. 4,  119–126