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Publications in Math-Net.Ru
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Determination of the thicknesses and visualization of ion-exchange waveguides in glasses by scanning electron microscopy
Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 456–459
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X-ray study of the superstructure in heavily doped porous indium phosphide
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 89–92
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X-ray studies of the domain formation in rocks under blasting
Fizika Tverdogo Tela, 58:11 (2016), 2248–2251
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Features of the structure and defect states in hydrogenated polymorphous silicon films
Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540
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ELECTRON-MICROSCOPIC STUDY OF INGAASP/INGAP/GAAS STRUCTURES WITH THIN
(LESS-THAN-10 NM) LAYERS BY THE LIQUID-PHASE EPITAXY TECHNIQUE
Zhurnal Tekhnicheskoi Fiziki, 62:2 (1992), 105–111
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POLARIMETRIC PROPERTIES OF NI-P-GAAS SURFACE-BARRIER STRUCTURES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992), 32–37
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DIRECTED PHOTOPLEOCHROISM OF ITO-A(3)B(5)(GAP, GAPXAS1-X)
HETEROTRANSITIONS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992), 11–15
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DETERMINATION OF (TC, DELTA-TC) LOCAL PARAMETERS OF HTSC FILMS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:21 (1992), 20–23
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POLARIMETRIC EFFECT IN AU-N-GAAS STRUCTURES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:12 (1992), 39–42
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PHOTOPLEOCHROISM OF MULTILAYERED GAP SURFACE-BARRIER STRUCTURES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:12 (1992), 11–15
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Возможности профилирования концентрации тяжелых элементов в тонких
ВТСП-пленках на пучках быстрых ионов
Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992), 91–94
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Дефекты с глубокими уровнями в GaAs, выращенном из раствора-расплава
Ga$-$Bi
Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 338–342
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EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH
MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5
LAYERS
Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990), 165–169
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Электронно-зондовые исследования деградации непрерывных инжекционных
гетеролазеров
Fizika i Tekhnika Poluprovodnikov, 24:11 (1990), 2010–2016
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Обнаружение нового метастабильного уровня $DX$-центра в тонких
легированных Si слоях Al$_{x}$Ga$_{1-x}$As
Fizika i Tekhnika Poluprovodnikov, 24:11 (1990), 1978–1982
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Особенности поведения радиационных дефектов в структурах
на основе Al$_{x}$Ga$_{1-x}$As/GaAs
Fizika i Tekhnika Poluprovodnikov, 24:7 (1990), 1320–1322
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Определение электрофизических параметров полупроводников методом
математического моделирования сигнала индуцированного тока
Fizika i Tekhnika Poluprovodnikov, 24:2 (1990), 271–275
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DIRECT OBSERVATION OF SPACE HETEROGENEITY OF HTSC FILM SUPERCONDUCTIVITY
BY THE LOW-TEMPERATURE SCREEN ELECTRON-MICROSCOPY METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:10 (1990), 47–51
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Бистабильные дефекты в GaAs, выращенном методом жидкофазной
эпитаксии
Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1689–1691
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Определение электрофизических параметров тонких гетероэпитаксиальных
слоев в растровом электронном микроскопе (эксперимент)
Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1416–1419
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Определение электрофизических параметров тонких гетероэпитаксиальных
слоев в растровом электронном микроскопе (теория)
Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1411–1415
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Механизм компенсации в многослойных структурах на основе
нелегированного GaAs, выращенных из раствора-расплава в Ga
Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1058–1065
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EFFECT OF ABRUPT INCREASE OF CONDUCTIVITY STIMULATED BY ELECTRON-BEAMS
IN ALLOYED GLASS-LIKE SEMICONDUCTORS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989), 48–51
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SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF
1,5-2,3 MU-M
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989), 15–19
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Определение времени жизни неосновных носителей в полупроводниках при
возбуждении электронным пучком в РЭМ
Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1803–1807
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EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON
GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1671–1675
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SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1651–1655
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CHANGE OF GALLIUM-ARSENIDE COMPOSITION IN THE VICINITY OF SURFACE UNDER
AR+-ION BOMBARDMENT
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 673–676
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MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID
EPITAXY METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988), 593–597
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LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE
APPROXIMATELY-20A WIDTH
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 171–176
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REMOTE FIELDS OF RADIATION OF HETEROLASERS WITH A GRADIENT WAVE-GUIDE
Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 747–754
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Function of Electron-Hole Pair Generation in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors under Electron-Beam Excitation
Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2028–2032
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Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures
Produced by MOC Hydride Method
Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1745–1749
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Current Induced by Electron Probe in Semiconductor Heterostructures
Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1648–1653
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Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures
Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1327–1329
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Determination of the Parameters of Radiationless Recombination in $p{-}n$ Structures by the Electron Probe
Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 938–941
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Information
Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 770
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Picosecond raster electronic microscopy of fast semiconducting devices
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987), 1183–1186
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Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 132–136
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Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures
Fizika Tverdogo Tela, 28:3 (1986), 789–792
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X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2206–2211
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Microcathodoluminescence of Double Heterostructures
Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1049–1054
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$Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1089–1093
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Electric and photoelectric properties of $Cd\,Te-Cd_{x}\,Hg_{1-x}\,Te$ (${x\sim0.6-0.7}$) heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:16 (1986), 976–979
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Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 533–537
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Review of the Book by B. A. Tkhorik and L. S. Khazan «Plastic Deformation and
Dislocations of Discrepancy in
Heteroepitaxial Systems»
Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1341–1342
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Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 193–197
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CRYSTALLIZATION OF HETEROSTRUCTURES FROM SOLUTION-FUSION SUPERCOOLING
Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 2077–2079
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EFFECT OF DEPTH OF THE P-N TRANSITION LOCATION ON X-RAY EMF CURVES UNDER
BRAGG-DIFFRACTION CONDITIONS
Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 655–657
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Исследование лавинного умножения в карбиде кремния с помощью
электронного зонда
Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1556–1560
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Electron-Probe Study of Deep Centers in Undoped GaAs
Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 383–385
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NON-HOMOGENEOUS MULTIPLICATION IN CASCADE PHOTODIODES WITH THE
INCONGRUITY OF LATTICE PERIODS ON THE HETEROBOUNDARY
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984), 1360–1364
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Нарушение псевдоморфного состояния в Ga$_{1-x}$Al$_{x}$P/GaP
структурах
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:3 (1984), 149–153
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DISTINCTION OF THERMAL-EXPANSION COEFFICIENTS IN GA1-XALXP-GAP
HETEROSTRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983), 411–412
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Квантовая эффективность пластически и упруго деформированных
варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур
Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2173–2176
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Мышьяк в Ga$_{1-x}$Al$_{x}$Sb$_{1-y}$As$_{y}$/GaSb: коэффициент
сегрегации и распределение по толщине эпитаксиальных слоев
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983), 645–648
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Андрей Георгиевич Забродский, к 75-летию со дня рождения
Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 893–894
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