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Publications in Math-Net.Ru
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High-power laser diode arrays based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs quantum-well heterostructures
Kvantovaya Elektronika, 53:8 (2023), 667–671
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Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlxGa1–xAs/AlyGa1–yAs heterostructure with optical and electron beam pumping
Kvantovaya Elektronika, 52:4 (2022), 362–366
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Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
Kvantovaya Elektronika, 52:2 (2022), 179–181
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Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 46–50
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InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
Kvantovaya Elektronika, 51:10 (2021), 905–908
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Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
Kvantovaya Elektronika, 51:4 (2021), 283–286
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Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
Kvantovaya Elektronika, 51:2 (2021), 133–136
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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Kvantovaya Elektronika, 50:5 (2020), 489–492
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Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
Kvantovaya Elektronika, 49:10 (2019), 909–912
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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
Kvantovaya Elektronika, 47:4 (2017), 291–293
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Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD
Kvantovaya Elektronika, 46:5 (2016), 447–450
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AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
Kvantovaya Elektronika, 43:10 (2013), 895–897
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High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
Kvantovaya Elektronika, 43:5 (2013), 407–409
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Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis
UFN, 194:1 (2024), 98–105
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