Simakov Vladimir Aleksandrovich

Publications in Math-Net.Ru

1. Температурная зависимость выходной оптической мощности полупроводниковых лазеров-тиристоров на основе гетероструктур AlGaAs/GaAs/InGaAs
   
   Kvantovaya Elektronika, 54:4 (2024),  218–223
2. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
3. Semiconductor lasers with improved radiation characteristics
   
   Kvantovaya Elektronika, 52:12 (2022),  1079–1087
4. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
5. Increasing the pump current range of a single-frequency laser diode tuned to the caesium D₂ line
   
   Kvantovaya Elektronika, 51:11 (2021),  970–975
6. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
7. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
8. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
   
   Kvantovaya Elektronika, 50:6 (2020),  600–602
9. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
   
   Kvantovaya Elektronika, 50:2 (2020),  143–146
10. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
11. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
12. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  649–652
13. AlGaInAs/InP semiconductor lasers with an increased electron barrier
    
    Kvantovaya Elektronika, 49:6 (2019),  519–521
14. Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 48:11 (2018),  993–995
15. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
    
    Kvantovaya Elektronika, 48:6 (2018),  495–501
16. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
    
    Kvantovaya Elektronika, 47:8 (2017),  693–695
17. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
    
    Kvantovaya Elektronika, 47:4 (2017),  291–293
18. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
    
    Kvantovaya Elektronika, 44:2 (2014),  149–156
19. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
    
    Kvantovaya Elektronika, 43:10 (2013),  895–897
20. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
    
    Kvantovaya Elektronika, 43:9 (2013),  822–823
21. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
    
    Kvantovaya Elektronika, 43:9 (2013),  819–821
22. High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
    
    Kvantovaya Elektronika, 43:5 (2013),  407–409
23. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  697–699
24. 808-nm laser diode bars based on epitaxially stacked double heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  682–684
25. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
    
    Kvantovaya Elektronika, 39:8 (2009),  723–726
26. Double integrated nanostructures for pulsed 0.9-μm laser diodes
    
    Kvantovaya Elektronika, 38:11 (2008),  989–992
27. Study of the parameters of a single-frequency laser for pumping cesium frequency standards
    
    Kvantovaya Elektronika, 38:4 (2008),  319–324
28. Study of the spectral and power characteristics of superluminescent diodes
    
    Kvantovaya Elektronika, 34:1 (2004),  15–19
29. An operator method for solving the problem on equilibrium of a nonhomogeneous anisotropic band
    
    Vestnik Moskov. Univ. Ser. 1. Mat. Mekh., 2003, no. 5,  63–68
30. Constructional features of a LISD-2M laser velocimeter and rangefinder
    
    Kvantovaya Elektronika, 32:3 (2002),  247–250
31. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
    
    Kvantovaya Elektronika, 32:3 (2002),  213–215
32. Highly efficient minilaser with transverse pulsed semiconductor pumping for eye-safe laser range-finding
    
    Kvantovaya Elektronika, 32:3 (2002),  210–212
33. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
    
    Kvantovaya Elektronika, 31:8 (2001),  659–660
34. The problem on equilibrium of a nonhomogeneous band
    
    Vestnik Moskov. Univ. Ser. 1. Mat. Mekh., 2000, no. 4,  66–70
35. Fiber-optic ring interferometer with a multimode waveguide
    
    Kvantovaya Elektronika, 10:10 (1983),  2104–2107
36. Radiative characteristics of injection lasers with short resonators
    
    Kvantovaya Elektronika, 10:2 (1983),  364–370


37. In memory of Mitrofan Fedorovich Stel'makh
    
    Kvantovaya Elektronika, 48:12 (2018),  1179
38. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)
    
    Kvantovaya Elektronika, 48:3 (2018),  290