Sokolova Zinaida Nikolaevna

Publications in Math-Net.Ru

1. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
2. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
3. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
4. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
5. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
6. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
7. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
8. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
9. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure
   
   Kvantovaya Elektronika, 46:9 (2016),  777–781
10. Integrated high-order surface diffraction gratings for diode lasers
    
    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
11. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
    
    Kvantovaya Elektronika, 45:10 (2015),  879–883
12. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
13. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
14. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
15. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes
    
    Kvantovaya Elektronika, 44:9 (2014),  801–805
16. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells
    
    Kvantovaya Elektronika, 43:5 (2013),  428–432
17. Расчеты вероятностей излучательных переходов и времен жизни в квантово-размерных структурах
    
    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1806–1812
18. Размерное квантование дырок и особенности экситонных спектров в квантовой яме конечной глубины
    
    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2124–2130
19. Влияние насыщения усиления на пороговые характеристики квантово-размерных InGaAsP/GaAs-гетеролазеров
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1035–1039
20. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
21. Special Features of Temperature Dependence of Thresholds in InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation and Thin Active Region
    
    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1496–1498
22. Special Features of Threshold Characteristics of InGaAsP/InP DH Lasers (${\lambda=1.3}\,\mu m$) with Separate Limitation and Superthin Active Regions
    
    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1420–1423
23. Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation
    
    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  449–455
24. Межзонная оже-рекомбинация в лазерных структурах на основе GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1803–1807
25. Recombination Processes in InGaAsP/InP Double Heterostructures with ${\lambda= 1\div1.5} \mu m$
    
    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1069–1076
26. TIME CALCULATIONS OF AUGER-PROCESSES IN P-INGAASP SOLID-SOLUTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  315–319
27. Оже-рекомбинация в вырожденной электронно-дырочной плазме твердых растворов InGaAsP
    
    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  453–458