Asryan Levon Volodyaevich

Publications in Math-Net.Ru

1. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
2. Parasitic recombination in a laser with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
3. Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics
   
   Kvantovaya Elektronika, 49:6 (2019),  522–528
4. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
5. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
6. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
7. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
8. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
9. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure
   
   Kvantovaya Elektronika, 46:9 (2016),  777–781
10. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes
    
    Kvantovaya Elektronika, 44:9 (2014),  801–805
11. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells
    
    Kvantovaya Elektronika, 43:5 (2013),  428–432
12. Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures
    
    Kvantovaya Elektronika, 35:12 (2005),  1117–1120