Gorlachuk Pavel Vladimirovich

Publications in Math-Net.Ru

1. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
2. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
   
   Kvantovaya Elektronika, 48:6 (2018),  495–501
3. A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm
   
   Kvantovaya Elektronika, 48:5 (2018),  472–475
4. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
   
   Kvantovaya Elektronika, 48:3 (2018),  197–200
5. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
   
   Kvantovaya Elektronika, 47:3 (2017),  272–274
6. Quantum cascade laser based on GaAs/Al_0.45Ga_0.55As heteropair grown by MOCVD
   
   Kvantovaya Elektronika, 46:5 (2016),  447–450
7. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
   
   Kvantovaya Elektronika, 44:2 (2014),  149–156
8. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
   
   Kvantovaya Elektronika, 43:9 (2013),  822–823
9. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
   
   Kvantovaya Elektronika, 43:9 (2013),  819–821
10. High-power cw laser bars of the 750 – 790-nm wavelength range
    
    Kvantovaya Elektronika, 43:6 (2013),  509–511