Yarotskaya Irina Valentinovna

Publications in Math-Net.Ru

1. Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with Al_xGa_1-xAs/Al_yGa_1-yAs quantum wells under optical pumping with different radiation wavelengths
   
   Kvantovaya Elektronika, 53:8 (2023),  636–640
2. Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al_xGa_1–xAs/Al_yGa_1–yAs heterostructure with optical and electron beam pumping
   
   Kvantovaya Elektronika, 52:4 (2022),  362–366
3. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
   
   Kvantovaya Elektronika, 52:2 (2022),  179–181
4. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
5. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
6. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
   
   Kvantovaya Elektronika, 51:4 (2021),  283–286
7. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
   
   Kvantovaya Elektronika, 51:2 (2021),  133–136
8. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
   
   Kvantovaya Elektronika, 50:5 (2020),  489–492
9. Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
   
   Kvantovaya Elektronika, 49:10 (2019),  909–912
10. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
    
    Kvantovaya Elektronika, 43:10 (2013),  895–897
11. High-power cw laser bars of the 750 – 790-nm wavelength range
    
    Kvantovaya Elektronika, 43:6 (2013),  509–511
12. Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures
    
    Kvantovaya Elektronika, 42:1 (2012),  15–17
13. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  697–699
14. 808-nm laser diode bars based on epitaxially stacked double heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  682–684


15. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis
    
    UFN, 194:1 (2024),  98–105