Seleznev V N

Publications in Math-Net.Ru

1. Simulation of grazing-incidence coherent imaging
   
   Kvantovaya Elektronika, 42:2 (2012),  140–142
2. NMR study of $\mathrm{Cr}^{3+}$ ion distribution in $\mathrm{Li}_{0.5}\mathrm{Fe}_{2.5-x}\mathrm{Cr}_{x}\mathrm{O}_{4}$
   
   Fizika Tverdogo Tela, 33:6 (1991),  1884–1886
3. Temperature dependence of the surface anisotropy of iron borate
   
   Fizika Tverdogo Tela, 31:6 (1989),  273–275
4. ENERGY-SPECTRUM OF LOCALIZED STATES OF SINX AMORPHOUS LAYERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  84–86
5. OBSERVATION OF THE DOMAIN-STRUCTURE ON NONBASIS FACETS OF FEBO3 CRYSTALS
   
   Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  2051–2053
6. New optoelectronic erasable storage medium (review)
   
   Kvantovaya Elektronika, 14:3 (1987),  437–451
7. New reusable optoelectronic storage medium
   
   Kvantovaya Elektronika, 14:1 (1987),  190–192
8. Photoluminescence of amorphous-silicon nitride
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:1 (1986),  10–13
9. Photoinduced uniaxial anisotropy in $\mathrm{FeBO}_{3}:\mathrm{Ni}$
   
   Fizika Tverdogo Tela, 27:1 (1985),  289–291
10. On the Temperature Dependence of Activation Energy of Conduction for Non Crystalline Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  156–158
11. Mossbauer determination of magnetic structure of $\mathrm{Fe}_{3}\mathrm{BO}_{6}$ crystals
    
    Fizika Tverdogo Tela, 26:10 (1984),  3068–3072
12. TRANSITION PROCESSES IN MNOP (METAL-SILICON NITRIDE SILICON OXIDE-SEMICONDUCTOR) STRUCTURES AND THEIR RELATION WITH THE INSTABILITY OF ELECTRIC CHARACTERISTICS OF DEVICES
    
    Zhurnal Tekhnicheskoi Fiziki, 53:6 (1983),  1089–1095
13. Optically controlled metal–insulator–semiconductor memory element
    
    Kvantovaya Elektronika, 8:12 (1981),  2707–2710
14. Electronic processes in metal-silicon nitride-silicon dioxide-semiconductor (MNOS) structures
    
    UFN, 134:4 (1981),  747–748
15. Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube
    
    Kvantovaya Elektronika, 7:7 (1980),  1585–1588
16. Possible use of metal-insulator-semiconductor structures with GaP–GaAs heterojunctions in optical data processing
    
    Kvantovaya Elektronika, 4:3 (1977),  678–681
17. Investigation of the resolution of EuO as a hologram recording material
    
    Kvantovaya Elektronika, 4:3 (1977),  669–672
18. Optically controlled memory element based on a metalnitride- oxide-semiconductor structure with a gallium arsenide substrate
    
    Kvantovaya Elektronika, 3:9 (1976),  2078–2080
19. Holographic storage of information in EuO films
    
    Kvantovaya Elektronika, 3:9 (1976),  2076–2078
20. Reversible recording of optical information in metal-dielectric-semiconductor structures
    
    Kvantovaya Elektronika, 2:9 (1975),  2013–2018
21. Photoelectric reading of information recorded in a MNOS structure
    
    Kvantovaya Elektronika, 2:3 (1975),  508–512
22. Investigation of the resolution of metal-nitride-oxide-semiconductor structures in recording and reading of optical information
    
    Kvantovaya Elektronika, 1:10 (1974),  2291–2293
23. Redistribution of the voltage in a metal-silicon nitride-silicon dioxide-silicon structure under the influence of laser radiation
    
    Kvantovaya Elektronika, 1:8 (1974),  1885–1888
24. Materials for erasable optical memories (review)
    
    Kvantovaya Elektronika, 1:7 (1974),  1485–1499


25. International Conference on Integrated and Guided-Wave Optics (Incline Village, Nevada, January 28–30,1980)
    
    Kvantovaya Elektronika, 8:1 (1981),  234–240