|
|
Publications in Math-Net.Ru
-
High-power pulsed, in-well-pumped InGaP/AlGaInP heterostructure, semiconductor disk laser
Kvantovaya Elektronika, 53:12 (2023), 891–897
-
Femtosecond Cr2+:ZnSe laser with mode-locking based on carbon nanotubes
Kvantovaya Elektronika, 53:11 (2023), 867–872
-
Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with
AlxGa1-xAs/AlyGa1-yAs quantum wells under optical pumping with different radiation wavelengths
Kvantovaya Elektronika, 53:8 (2023), 636–640
-
Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlxGa1–xAs/AlyGa1–yAs heterostructure with optical and electron beam pumping
Kvantovaya Elektronika, 52:4 (2022), 362–366
-
Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode
Kvantovaya Elektronika, 52:4 (2022), 359–361
-
Nanosecond semiconductor disk laser emitting at 496.5 nm
Kvantovaya Elektronika, 50:10 (2020), 895–899
-
Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
Kvantovaya Elektronika, 50:7 (2020), 683–687
-
Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
Kvantovaya Elektronika, 49:10 (2019), 909–912
-
Thermoelectrically cooled, repetitively pulsed Fe : ZnSe laser
Kvantovaya Elektronika, 49:7 (2019), 641–648
-
Paramagnetic complexes in zinc selenide crystals with iron admixture
Fizika Tverdogo Tela, 60:7 (2018), 1365–1369
-
Nanosecond room-temperature Fe : ZnSe laser pumped inside the resonator of a transversely diode-pumped Er : YLF laser
Kvantovaya Elektronika, 48:8 (2018), 686–690
-
Paramagnetic defects in ZnSe crystals doped with iron ions
Fizika Tverdogo Tela, 59:10 (2017), 1970–1977
-
Efficient operation of a room-temperature Fe2+ : ZnSe laser pumped by a passively Q-switched Er : YAG laser
Kvantovaya Elektronika, 47:9 (2017), 831–834
-
Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure
Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 108–113
-
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 700–705
-
Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings
Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 9–16
-
Study of the formation of a microrelief on ZnSe- and CdSe-crystal surfaces ablated by excimer KrF-laser radiaton
Kvantovaya Elektronika, 46:10 (2016), 903–910
-
Room-temperature Fe2+ : ZnS single crystal laser pumped by an electric-discharge HF laser
Kvantovaya Elektronika, 46:9 (2016), 769–771
-
Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes
Kvantovaya Elektronika, 45:1 (2015), 1–7
-
Intracavity laser spectroscopy with a semiconductor disk laser-pumped cw Cr2+ : ZnSe laser
Kvantovaya Elektronika, 43:9 (2013), 885–889
-
Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser
Kvantovaya Elektronika, 42:7 (2012), 583–587
-
Observation of saturated dispersion resonances of methane in a two-mode Cr2+ : ZnSe/CH4 laser
Kvantovaya Elektronika, 42:7 (2012), 565–566
-
Tunable two-mode Cr2+ : ZnSe laser with a frequency-noise spectral density of 0.03 Hz Hz-1/2
Kvantovaya Elektronika, 42:6 (2012), 509–513
-
Modelling of a diode laser with a resonant grating of quantum wells and an external mirror
Kvantovaya Elektronika, 41:9 (2011), 769–775
-
Pulsed Fe2+:ZnS laser continuously tunable in the wavelength range of 3.49 — 4.65 μm
Kvantovaya Elektronika, 41:1 (2011), 1–3
-
Continuous-wave Cr2+:CdS laser
Kvantovaya Elektronika, 40:1 (2010), 7–10
-
Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser
Kvantovaya Elektronika, 39:11 (2009), 1028–1032
-
Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror
Kvantovaya Elektronika, 39:8 (2009), 731–734
-
A continuous-wave Fe2+:ZnSe laser
Kvantovaya Elektronika, 38:12 (2008), 1113–1116
-
A Cr2+:CdS laser tunable between 2.2 and 3.3 μm
Kvantovaya Elektronika, 38:9 (2008), 803–804
-
Efficient pulsed Cr2+:CdSe laser continuously tunable in the spectral range from 2.26 to 3.61 μm
Kvantovaya Elektronika, 38:3 (2008), 205–208
-
Intracavity laser spectroscopy by using a Fe2+:ZnSe laser
Kvantovaya Elektronika, 37:11 (2007), 1071–1075
-
Efficient cw lasing in a Cr2+:CdSe crystal
Kvantovaya Elektronika, 37:11 (2007), 991–992
-
A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region
Kvantovaya Elektronika, 37:9 (2007), 857–862
-
Laser cathode-ray tube with a monolithic laser screen
Kvantovaya Elektronika, 37:9 (2007), 853–856
-
Efficient lasing in a Fe2+:ZnSe crystal at room temperature
Kvantovaya Elektronika, 36:4 (2006), 299–301
-
Passive Fe2+:ZnSe single-crystal Q switch for 3-μm lasers
Kvantovaya Elektronika, 36:1 (2006), 1–2
-
Laser parameters of a Fe:ZnSe crystal in the 85–255-K temperature range
Kvantovaya Elektronika, 35:9 (2005), 809–812
-
Spectral dynamics of intracavity absorption in a pulsed Cr2+:ZnSe laser
Kvantovaya Elektronika, 35:5 (2005), 425–428
-
Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain
Kvantovaya Elektronika, 34:10 (2004), 919–923
-
Efficient IR Fe:ZnSe laser continuously tunable in the spectral range from 3.77 to 4.40 μm
Kvantovaya Elektronika, 34:10 (2004), 912–914
-
Intracavity laser spectroscopy using a Cr2+ : ZnSe laser
Kvantovaya Elektronika, 34:2 (2004), 185–188
-
Efficient lasing of a Cr2+ : ZnSe crystal grown from a vapour phase
Kvantovaya Elektronika, 33:5 (2003), 408–410
-
Threshold and efficiency of a laser cathode-ray tube at room temperature
Kvantovaya Elektronika, 33:1 (2003), 48–56
-
Temperature regime of the laser screen of a cathode-ray tube
Kvantovaya Elektronika, 32:4 (2002), 297–302
-
Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy
Kvantovaya Elektronika, 25:4 (1998), 305–307
-
Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice
Kvantovaya Elektronika, 22:8 (1995), 756–758
-
CdSxSe1–x/CdS heterostructures in longitudinally electron-beam-pumped lasers
Kvantovaya Elektronika, 14:10 (1987), 1994–1997
-
Highly efficient semiconductor laser with longitudinal pumping of gallium arsenide by a scanning electron beam
Kvantovaya Elektronika, 14:1 (1987), 170–176
-
Saturation of the cathodoluminescence associated with isoelectronic $\mathrm{Te}$ impurity in $\mathrm{CdS}_{1-x}\mathrm{Te}_{x}$ and $\mathrm{ZnS}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.05)$ under high excitation levels
Fizika Tverdogo Tela, 28:11 (1986), 3313–3318
-
Localized exciton luminescence in $\mathrm{ZnS}_{1-x}\mathrm{Se}_{x}$ solid solution
Fizika Tverdogo Tela, 27:9 (1985), 2756–2759
-
$\mathrm{Te}_{n}$-clusters–centers of effective radiative recombination in $\mathrm{ZnSe}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.2)$
Fizika Tverdogo Tela, 27:6 (1985), 1734–1741
-
Single crystals of ZnSe1–xTex, Zn1–xCdxSe, and ZnxCd1–xS solid solutions for electron-beam-pumped lasers
Kvantovaya Elektronika, 12:5 (1985), 1113–1116
-
Scanned and cw GaSb lasers with longitudinal electron beam pumping
Kvantovaya Elektronika, 12:4 (1985), 845–848
-
Ultraviolet ZnS semiconductor laser pumped longitudinally by an electron beam
Kvantovaya Elektronika, 11:3 (1984), 618–621
-
Use of a point cathode made of LaB6 in a laser cathode-ray tube
Kvantovaya Elektronika, 10:8 (1983), 1699–1700
-
Investigation of cw operation of a GaAs laser pumped by an electron beam
Kvantovaya Elektronika, 9:11 (1982), 2211–2216
-
Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam
Kvantovaya Elektronika, 9:10 (1982), 2099–2102
-
Influence of the electron–phonon interaction on the absorption and stimulated emission processes in CdS
Kvantovaya Elektronika, 9:4 (1982), 806–810
-
Influence of dislocations on the characteristics of laser screens made of CdS
Kvantovaya Elektronika, 8:4 (1981), 745–750
-
Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube
Kvantovaya Elektronika, 7:7 (1980), 1585–1588
-
Formation of a television image with the aid of a laser electron-beam tube under line scanning conditions
Kvantovaya Elektronika, 2:7 (1975), 1587–1588
-
Formation of a television image on a large screen with the aid of a laser electron-beam tube
Kvantovaya Elektronika, 1:11 (1974), 2521–2523
-
Laser screen made of bulk cadmium sulfide and selenide single crystals
Kvantovaya Elektronika, 1:9 (1974), 2083–2085
-
Electron-beam tube with a laser screen
Kvantovaya Elektronika, 1:3 (1974), 534–541
-
Use of a cathode-ray tube with a semiconductor laser screen for recording of phase holograms in photoolastic materials
Kvantovaya Elektronika, 1:1 (1974), 193–195
-
Recording of holograms using a cathode-ray tube with a laser screen
Kvantovaya Elektronika, 1:1 (1974), 158–159
-
Reconstruction of a holographic image with radiation produced by a semiconductor laser screen
Kvantovaya Elektronika, 1:1 (1974), 84–90
-
Errata to the article: Temperature regime of the laser screen of a cathode-ray tube
Kvantovaya Elektronika, 32:6 (2002), 564
-
Erratum: Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [Quantum Electronics 28 (4) 294 - 296 (1998)]
Kvantovaya Elektronika, 25:6 (1998), 576
© , 2024