Aruev Pavel Nikolaevich

Publications in Math-Net.Ru

1. In memory of I.T. Serenkov. Silicon avalanche photodiode with photoresponse rise time less than 350 ps at wavelength 1064 nm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  15–18
2. Temperature dependence of dislocation-related electroluminescence in silicon light-emitting diodes containing oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  289–294
3. Silicon light-emitting diodes with dislocation-related luminescence fabricated with participation of oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  904–907
4. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  3–6
5. Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1922–1929
6. Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
   
   Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1386–1392
7. Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup
   
   Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020),  693–698
8. Silicon light-emitting diodes with luminescence from (113) defects
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  580–584
9. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
10. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
11. Detection of UV radiation from extensive air showers: prospects for Cherenkov gamma-ray astronomy
    
    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1655–1666
12. Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project
    
    Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017),  803–821
13. Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
    
    Fizika Tverdogo Tela, 58:12 (2016),  2411–2414
14. Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  254–258
15. Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  250–253
16. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
17. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range
    
    Kvantovaya Elektronika, 42:10 (2012),  943–948