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Publications in Math-Net.Ru
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Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks
Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1922–1929
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Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392
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Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup
Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020), 693–698
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Silicon light-emitting diodes with luminescence from (113) defects
Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 580–584
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Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 10–13
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Characteristics of a silicon avalanche photodiode for the near-IR spectral range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 40–42
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Detection of UV radiation from extensive air showers: prospects for Cherenkov gamma-ray astronomy
Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018), 1655–1666
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Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project
Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017), 803–821
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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
Fizika Tverdogo Tela, 58:12 (2016), 2411–2414
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Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 254–258
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Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 250–253
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Si:Si LEDs with room-temperature dislocation-related luminescence
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 241–244
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Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range
Kvantovaya Elektronika, 42:10 (2012), 943–948
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