Eliseev Petr Georgievich

Publications in Math-Net.Ru

1. N. G. Basov and early works on semiconductor lasers at P. N. Lebedev Physics Institute
   
   Kvantovaya Elektronika, 42:12 (2012),  1073–1080
2. Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect
   
   Kvantovaya Elektronika, 39:6 (2009),  501–504
3. On the calculation of the gyro-factor in a semiconductor ring laser
   
   Kvantovaya Elektronika, 36:8 (2006),  738–740
4. Spectral perturbations in a semiconductor laser: II. Nonlinear interaction of modes
   
   Kvantovaya Elektronika, 35:9 (2005),  791–794
5. Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
   
   Kvantovaya Elektronika, 35:9 (2005),  787–790
6. Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity
   
   Kvantovaya Elektronika, 34:12 (2004),  1127–1132
7. Semiconductor lasers: from homojunctions to quantum dots
   
   Kvantovaya Elektronika, 32:12 (2002),  1085–1098
8. Stimulated emission from GaAs:Er, O at 1538 nm
   
   Kvantovaya Elektronika, 31:11 (2001),  962–964
9. Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model
   
   Kvantovaya Elektronika, 30:8 (2000),  664–668
10. Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots
    
    Kvantovaya Elektronika, 30:2 (2000),  152–157
11. High-temperature properties of InGaN light-emitting diodes
    
    Kvantovaya Elektronika, 25:11 (1998),  1013–1016
12. Emission from quantum-well InGaAs structures
    
    Kvantovaya Elektronika, 25:3 (1998),  206–210
13. Semiconductor lasers
    
    Kvantovaya Elektronika, 24:12 (1997),  1067–1079
14. Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents
    
    Kvantovaya Elektronika, 23:12 (1996),  1069–1071
15. Self-distribution of the current in laser diodes and its possible use for reducing the optical nonlinearity of the active medium
    
    Kvantovaya Elektronika, 23:4 (1996),  307–310
16. Optical strength of the mirror faces of a pulsed InGaAs/GaAs/GaAIAs semiconductor laser
    
    Kvantovaya Elektronika, 22:9 (1995),  895–896
17. Power hysteresis and waveguide bistability of stripe quantum-well InGaAs\/GaAs\/GaAIAs heterolasers with a strained active layer
    
    Kvantovaya Elektronika, 22:4 (1995),  309–320
18. Threshold drop of the differential resistance of stripe quantum-well InGaAs\/GaAIAs lasers
    
    Kvantovaya Elektronika, 22:2 (1995),  108–110
19. Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures
    
    Kvantovaya Elektronika, 21:5 (1994),  405–408
20. Analysis of electron confinement by a periodic semiconductor structure
    
    Kvantovaya Elektronika, 20:9 (1993),  846–850
21. Theoretical analysis of profiled quantum-well laser structures
    
    Kvantovaya Elektronika, 20:1 (1993),  31–38
22. Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region
    
    Kvantovaya Elektronika, 19:10 (1992),  1024–1031
23. Problems involved in the profiling of quantum wells and barriers for optoelectronic applications
    
    Kvantovaya Elektronika, 19:10 (1992),  1014–1017
24. Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure
    
    Kvantovaya Elektronika, 19:7 (1992),  674–676
25. Radiative characteristics of buried mesa stripe heterolasers emitting at 1.5 μm
    
    Kvantovaya Elektronika, 17:9 (1990),  1147–1150
26. Injection laser with a waveguide lens
    
    Kvantovaya Elektronika, 16:11 (1989),  2173–2176
27. Nonradiative losses in InGaAsP/InP heterostructures
    
    Kvantovaya Elektronika, 16:10 (1989),  2074–2077
28. Investigation of the transverse structure of the radiation field of an injection laser using an external dispersive resonator
    
    Kvantovaya Elektronika, 16:9 (1989),  1765–1769
29. Single-mode laser amplifier operating in the 1.3 μm range and using a buried stripe heterostructure
    
    Kvantovaya Elektronika, 16:8 (1989),  1606–1608
30. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
    
    Kvantovaya Elektronika, 16:3 (1989),  457–462
31. Laser diode modules
    
    Kvantovaya Elektronika, 15:11 (1988),  2245–2246
32. Electrical response of InGaAsP/InP heterolasers
    
    Kvantovaya Elektronika, 15:11 (1988),  2227–2230
33. Line width of a single longitudinal mode emitted by an AlGaAs heterojunction laser
    
    Kvantovaya Elektronika, 15:11 (1988),  2223–2226
34. Injection lasers based on the AlGaAsSb system emitting at 1,6 μm
    
    Kvantovaya Elektronika, 15:11 (1988),  2208–2209
35. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
    
    Kvantovaya Elektronika, 15:11 (1988),  2171–2172
36. Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure
    
    Kvantovaya Elektronika, 15:8 (1988),  1595–1601
37. Width and profile of the emission line of a cw InGaAsP/InP laser with a buried stripe heterostructure
    
    Kvantovaya Elektronika, 15:8 (1988),  1552–1554
38. Influence of temperature on the angular distribution of radiation emitted by InGaAsP heterolasers
    
    Kvantovaya Elektronika, 15:2 (1988),  253–258
39. CONTINUOUS GENERATION AND HIGH-TEMPERATURE LASER TESTS UNDER 100-DEGREES-C BASED ON INGAASP/INP
    
    Zhurnal Tekhnicheskoi Fiziki, 57:8 (1987),  1570–1574
40. Low-threshold InGaAsP/InP injection lasers
    
    Kvantovaya Elektronika, 14:11 (1987),  2201–2202
41. Investigation of the service life of cw GaAIAs/GaAs injection lasers
    
    Kvantovaya Elektronika, 14:4 (1987),  892–894
42. Phase locking of stimulated emission from arrays of stripe GaAIAs/GaAs lasers using active directional couplers
    
    Kvantovaya Elektronika, 14:4 (1987),  874–876
43. Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range
    
    Kvantovaya Elektronika, 14:1 (1987),  204–205
44. Fluctuations of the intensity of radiation from a single-frequency injection laser with an external dispersive resonator
    
    Kvantovaya Elektronika, 13:12 (1986),  2414–2423
45. Injection InGaSbAs laser emitting at 2.4μ (300K)
    
    Kvantovaya Elektronika, 13:10 (1986),  2119–2120
46. Optical traveling-wave amplifier based on an injection laser diode
    
    Kvantovaya Elektronika, 13:9 (1986),  1859–1867
47. Causes and distribution of failure of semiconductor lasers (review)
    
    Kvantovaya Elektronika, 13:9 (1986),  1749–1769
48. Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion
    
    Kvantovaya Elektronika, 13:8 (1986),  1610–1616
49. Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and wattampere characteristic
    
    Kvantovaya Elektronika, 13:8 (1986),  1603–1609
50. Light-emission and degradation characteristics of InGaAsP/lnP heterostructures
    
    Kvantovaya Elektronika, 13:7 (1986),  1376–1380
51. Study of perforation of a thin-film recording medium by sharply focused GaAlAs/GaAs laser radiation
    
    Kvantovaya Elektronika, 13:6 (1986),  1261–1264
52. Semiconductor lasers
    
    UFN, 148:1 (1986),  35–53
53. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
    
    Kvantovaya Elektronika, 12:6 (1985),  1309–1311
54. Nonlinear refraction in semiconductor lasers (review)
    
    Kvantovaya Elektronika, 12:3 (1985),  465–493
55. Continuous-wave single-frequency emission from an injection laser in the form of a terraced heterostructure with an external dispersive resonator
    
    Kvantovaya Elektronika, 12:1 (1985),  162–164
56. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
57. Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression
    
    Kvantovaya Elektronika, 11:8 (1984),  1665–1667
58. Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К
    
    Kvantovaya Elektronika, 11:4 (1984),  645–646
59. Three-layer waveguide InGaAsP/lnP injection lasers
    
    Kvantovaya Elektronika, 11:3 (1984),  631–633
60. Spectrally matched modulation, at frequencies up to 2 GHz, of injection laser radiation in a traveling-wave amplifier
    
    Kvantovaya Elektronika, 11:2 (1984),  231–232
61. Qualitative analysis of the threshold current of quantum-size semiconductor lasers
    
    Kvantovaya Elektronika, 11:1 (1984),  178–181
62. Accelerated service life tests on injection lasers and transmitter modules
    
    Kvantovaya Elektronika, 10:10 (1983),  2118–2120
63. Interaction of modes and self-stabilization of singlefrequency emission from injection lasers
    
    Kvantovaya Elektronika, 10:9 (1983),  1851–1865
64. Stimulated scattering of light by waves representing excited-state populations
    
    Kvantovaya Elektronika, 10:4 (1983),  865–867
65. Optical fiber coupling of 1.2–1.6 μ radiation emitted from buried mesastripe injection lasers
    
    Kvantovaya Elektronika, 10:3 (1983),  633–635
66. Analysis of factors influencing the threshold current of Pb_1–xSn_xSe injection heterolasers
    
    Kvantovaya Elektronika, 9:11 (1982),  2140–2150
67. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
    
    Kvantovaya Elektronika, 9:9 (1982),  1902–1904
68. Electrical diagnostics of the operating conditions in a monitoring amplifier based on a laser diode
    
    Kvantovaya Elektronika, 9:9 (1982),  1851–1853
69. Optoelectronic readout with an injection laser
    
    Kvantovaya Elektronika, 9:9 (1982),  1825–1830
70. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range
    
    Kvantovaya Elektronika, 9:9 (1982),  1749
71. Tunable cw emission in the 1.3/J range from a GaInPAs/InP heterolaser with an external dispersive resonator
    
    Kvantovaya Elektronika, 9:7 (1982),  1504–1506
72. Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs
    
    Kvantovaya Elektronika, 8:9 (1981),  1994–1996
73. Service life of GalnPAs/lnP heterostructures
    
    Kvantovaya Elektronika, 8:9 (1981),  1985–1987
74. Radiofrequency spectra of mode beats and fluctuations of the intensity of radiation emitted by an injection laser with an external resonator
    
    Kvantovaya Elektronika, 8:9 (1981),  1957–1961
75. Radiative characteristics of an injection laser with a zigzag mesastripe AlGaAs–GaAs heterostructure
    
    Kvantovaya Elektronika, 8:7 (1981),  1565–1567
76. Bistable operation and spectral tuning of an injection laser with an external dispersive resonator
    
    Kvantovaya Elektronika, 8:4 (1981),  853–859
77. Theory of stimulated glide of dislocations in laser semiconductor crystals under strong pumping conditions
    
    Kvantovaya Elektronika, 8:1 (1981),  206–209
78. Characteristics of a channel injection heterojunction laser
    
    Kvantovaya Elektronika, 8:1 (1981),  193–196
79. Optical heterodyning of radiation from an injection laser with an external dispersive resonator
    
    Kvantovaya Elektronika, 7:12 (1980),  2642–2644
80. Mesastripe injection heterolaser with heat removal through the substrate
    
    Kvantovaya Elektronika, 7:11 (1980),  2504–2506
81. Injection $GaInPAs/InP$ heterojunction laser with $6-7^\circ$ output divergence, emitting nonwaveguide modes
    
    Kvantovaya Elektronika, 7:11 (1980),  2487–2488
82. Fast-response photodiode based on a surface-barrier $Au-nn^+-GaAs$ structure
    
    Kvantovaya Elektronika, 7:10 (1980),  2218–2221
83. Broadening of spectral modes of a semiconductor laser in the case of pulsations of the emission intensity
    
    Kvantovaya Elektronika, 7:10 (1980),  2197–2201
84. Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:9 (1980),  1990–1992
85. Use of injection heterojunction lasers in fiber-optic communications systems (review)
    
    Kvantovaya Elektronika, 7:9 (1980),  1845–1868
86. Properties of planar stripe-geometry heterojunction lasers. II. Analysis of electrical characteristics
    
    Kvantovaya Elektronika, 7:8 (1980),  1670–1676
87. Properties of planar stripe-geometry heterojunction lasers. I. Nonlinear and discontinuous current-power characteristics
    
    Kvantovaya Elektronika, 7:8 (1980),  1664–1669
88. Use of the Epstein dielectric model to describe modes of planar stripe-geometry heterojunction lasers
    
    Kvantovaya Elektronika, 7:7 (1980),  1407–1416
89. Injection laser with an unstable resonator
    
    Kvantovaya Elektronika, 7:5 (1980),  1089–1092
90. Stepped shape of radiation pulses emitted by double-heterostructure GaAs–AlGaAs injection lasers with stripe contacts
    
    Kvantovaya Elektronika, 7:1 (1980),  123–127
91. Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:1 (1980),  91–96
92. Reduction of the divergence of injection laser radiation by excitation of nonwaveguide modes
    
    Kvantovaya Elektronika, 6:12 (1979),  2639–2641
93. Diode simulators of solid-state lasers
    
    Kvantovaya Elektronika, 6:12 (1979),  2617–2618
94. Interpretation of frequency self-modulation of semiconductor laser radiation
    
    Kvantovaya Elektronika, 6:10 (1979),  2243–2245
95. Single-frequency cw injection heterolaser tunable by an external dispersive resonator
    
    Kvantovaya Elektronika, 6:6 (1979),  1264–1270
96. Theory of defect-forming resonance electron capture in laser crystals
    
    Kvantovaya Elektronika, 6:5 (1979),  1057–1061
97. Hysteresis of the output radiation power of cw AlGaAs heterolasers
    
    Kvantovaya Elektronika, 5:11 (1978),  2493–2495
98. High-efficiency GaInPAs/InP light-emitting diodes
    
    Kvantovaya Elektronika, 5:11 (1978),  2488–2489
99. Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. II. Theory
    
    Kvantovaya Elektronika, 5:11 (1978),  2408–2415
100. Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. I. Experimental investigation using an external resonator
     
     Kvantovaya Elektronika, 5:11 (1978),  2402–2407
101. Influence of the operation regime of an injection laser on the efficiency of coupling of its radiation into an optical waveguide
     
     Kvantovaya Elektronika, 5:9 (1978),  2038–2041
102. Injection heterolaser based on InGaAsSb four-component solid solution
     
     Kvantovaya Elektronika, 5:3 (1978),  703–704
103. Mode deformation due to self-focusing in injection lasers and its connection with nonlinearity of the output characteristic
     
     Kvantovaya Elektronika, 5:3 (1978),  603–608
104. Mechanism of the displacement of atoms in laser crystals as a result of nonradiative recombination
     
     Kvantovaya Elektronika, 5:1 (1978),  203–206
105. Characteristics of n-GaP_x As_1–x–pGa_1–yAl_yP_xAs_1–x heterojunction lasers emitting visible radiation
     
     Kvantovaya Elektronika, 4:8 (1977),  1821–1823
106. Multicomponent solid solutions of IV-VI compounds
     
     Kvantovaya Elektronika, 4:4 (1977),  904–907
107. Radiative characteristics of an injection laser with an external resonator
     
     Kvantovaya Elektronika, 3:8 (1976),  1819–1821
108. Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers
     
     Kvantovaya Elektronika, 3:7 (1976),  1609–1611
109. Multicomponent semiconductor solid solutions and their laser applications (review)
     
     Kvantovaya Elektronika, 3:7 (1976),  1381–1393
110. Investigation of Al_xGa_1–xAs injection heterolasers emitting visible radiation
     
     Kvantovaya Elektronika, 3:5 (1976),  1080–1084
111. Luminescence and stimulated emission from Ga_xln_1–xAs_ySb_1–y
     
     Kvantovaya Elektronika, 3:4 (1976),  932–934
112. New uncooled injection heterolaser emitting in the 1.5–1.8 μ range
     
     Kvantovaya Elektronika, 3:2 (1976),  465–466
113. Use of gradient light guides in semiconductor lasers
     
     Kvantovaya Elektronika, 2:4 (1975),  848–850
114. Role of mechanical stresses in gradual degradation of light-emitting diodes and injection lasers
     
     Kvantovaya Elektronika, 2:1 (1975),  127–129
115. Heterojunction lasers made of Ga_xIn_1–xAs_yP_1–y and Al_xGa_1–xSb_yAs_1–y solid solutions
     
     Kvantovaya Elektronika, 1:10 (1974),  2294–2295
116. Anomalous interaction of spectral modes in a semiconductor laser
     
     Kvantovaya Elektronika, 1:10 (1974),  2286–2288
117. Interferometric investigations of the picosecond structure and conditions for the emission of ultrashort pulses from injection lasers
     
     Kvantovaya Elektronika, 1:9 (1974),  1988–1993
118. Degradation of injection lasers during operation and under the influence of fast particles
     
     Kvantovaya Elektronika, 1:5 (1974),  1271–1273
119. Injection laser with a diffraction grating in its resonator
     
     Kvantovaya Elektronika, 1:5 (1974),  1145–1149
120. Investigation of the relationships governing multimode excitation in injection lasers
     
     Kvantovaya Elektronika, 1:5 (1974),  1138–1144
121. Control of the polarization of heterolaser radiation by uniaxial compression
     
     Kvantovaya Elektronika, 1:1 (1974),  196–197
122. Influence of microwave modulation on the emission spectrum of an injection laser
     
     Kvantovaya Elektronika, 1:1 (1974),  151–154
123. Internal Q switching in single-sided heterojunction injection lasers
     
     Kvantovaya Elektronika, 1973, no. 5(17),  116–117
124. Kinetics of the emission spectrum of an injection laser and collapse of single-mode emission
     
     Kvantovaya Elektronika, 1973, no. 5(17),  14–20
125. Single-mode and single-frequency injection lasers (review)
     
     Kvantovaya Elektronika, 1973, no. 3(15),  5–26
126. Heterojunction injection lasers (review)
     
     Kvantovaya Elektronika, 1972, no. 6(12),  3–28
127. Statistical distribution of the failure of injection lasers
     
     Kvantovaya Elektronika, 1972, no. 3(9),  107
128. Empirical estimation of the service life of injection lasers from short-term tests
     
     Kvantovaya Elektronika, 1972, no. 3(9),  105–106
129. Comparison of the instantaneous and averaged emission spectra of an injection laser operating under spiking conditions
     
     Kvantovaya Elektronika, 1971, no. 5,  93–95
130. Optimal thickness of the active layer in a heterojunction laser
     
     Kvantovaya Elektronika, 1971, no. 3,  120–121
131. Methods for mode selection in injection lasers
     
     Kvantovaya Elektronika, 1971, no. 1,  85–90


132. Laser engineering
     
     UFN, 160:2 (1990),  338–339
133. Brief review of papers presented at the SELCO-87 Conference
     
     Kvantovaya Elektronika, 15:11 (1988),  2175–2177
134. Second International School on Semiconductor Optoelectronics "Cetniewo, 1978"
     
     Kvantovaya Elektronika, 5:11 (1978),  2503–2506
135. Second Topical Meeting on Optical Fiber Transmission Williamsburg, Va., February 22–24,1977
     
     Kvantovaya Elektronika, 4:9 (1977),  2059–2065
136. International Autumn School on Semiconductor Optoelectronics "Cetniewo 1975"
     
     Kvantovaya Elektronika, 3:3 (1976),  672–674
137. First Ail-Union Conference on Physical Processes in Heterojunctions, Kishinev, October 30–November 1,1974
     
     Kvantovaya Elektronika, 2:3 (1975),  623–627