Skasyrsky Yan Konstantinovich

Publications in Math-Net.Ru

1. Determination of the diffusion length of nonequilibrium carriers in CdS/ZnSe/ZnSSe heterostructures designed for semiconductor disk lasers
   
   Kvantovaya Elektronika, 54:2 (2024),  89–94
2. High-power pulsed, in-well-pumped InGaP/AlGaInP heterostructure, semiconductor disk laser
   
   Kvantovaya Elektronika, 53:12 (2023),  891–897
3. Femtosecond Cr²⁺:ZnSe laser with mode-locking based on carbon nanotubes
   
   Kvantovaya Elektronika, 53:11 (2023),  867–872
4. Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with Al_xGa_1-xAs/Al_yGa_1-yAs quantum wells under optical pumping with different radiation wavelengths
   
   Kvantovaya Elektronika, 53:8 (2023),  636–640
5. Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al_xGa_1–xAs/Al_yGa_1–yAs heterostructure with optical and electron beam pumping
   
   Kvantovaya Elektronika, 52:4 (2022),  362–366
6. Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode
   
   Kvantovaya Elektronika, 52:4 (2022),  359–361
7. Nanosecond semiconductor disk laser emitting at 496.5 nm
   
   Kvantovaya Elektronika, 50:10 (2020),  895–899
8. Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
   
   Kvantovaya Elektronika, 50:7 (2020),  683–687
9. Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
   
   Kvantovaya Elektronika, 49:10 (2019),  909–912
10. Thermoelectrically cooled, repetitively pulsed Fe : ZnSe laser
    
    Kvantovaya Elektronika, 49:7 (2019),  641–648
11. Nanosecond room-temperature Fe : ZnSe laser pumped inside the resonator of a transversely diode-pumped Er : YLF laser
    
    Kvantovaya Elektronika, 48:8 (2018),  686–690
12. Spectral and power characteristics of a 5% Tm : KLu(WO₄)₂ N_m-cut minislab laser passively Q-switched by a Cr²⁺ : ZnSe crystal
    
    Kvantovaya Elektronika, 47:11 (2017),  981–985
13. Efficient operation of a room-temperature Fe²⁺ : ZnSe laser pumped by a passively Q-switched Er : YAG laser
    
    Kvantovaya Elektronika, 47:9 (2017),  831–834
14. Study of the formation of a microrelief on ZnSe- and CdSe-crystal surfaces ablated by excimer KrF-laser radiaton
    
    Kvantovaya Elektronika, 46:10 (2016),  903–910
15. Room-temperature Fe²⁺ : ZnS single crystal laser pumped by an electric-discharge HF laser
    
    Kvantovaya Elektronika, 46:9 (2016),  769–771
16. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes
    
    Kvantovaya Elektronika, 45:1 (2015),  1–7
17. Intracavity laser spectroscopy with a semiconductor disk laser-pumped cw Cr²⁺ : ZnSe laser
    
    Kvantovaya Elektronika, 43:9 (2013),  885–889
18. Pulsed Fe²⁺:ZnS laser continuously tunable in the wavelength range of 3.49 — 4.65 μm
    
    Kvantovaya Elektronika, 41:1 (2011),  1–3
19. Continuous-wave Cr²⁺:CdS laser
    
    Kvantovaya Elektronika, 40:1 (2010),  7–10
20. Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror
    
    Kvantovaya Elektronika, 39:8 (2009),  731–734
21. A continuous-wave Fe²⁺:ZnSe laser
    
    Kvantovaya Elektronika, 38:12 (2008),  1113–1116
22. A Cr²⁺:CdS laser tunable between 2.2 and 3.3 μm
    
    Kvantovaya Elektronika, 38:9 (2008),  803–804
23. Efficient pulsed Cr²⁺:CdSe laser continuously tunable in the spectral range from 2.26 to 3.61 μm
    
    Kvantovaya Elektronika, 38:3 (2008),  205–208
24. Efficient cw lasing in a Cr²⁺:CdSe crystal
    
    Kvantovaya Elektronika, 37:11 (2007),  991–992
25. A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region
    
    Kvantovaya Elektronika, 37:9 (2007),  857–862
26. Laser cathode-ray tube with a monolithic laser screen
    
    Kvantovaya Elektronika, 37:9 (2007),  853–856
27. Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain
    
    Kvantovaya Elektronika, 34:10 (2004),  919–923
28. Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy
    
    Kvantovaya Elektronika, 25:4 (1998),  305–307
29. Use of a point cathode made of LaB₆ in a laser cathode-ray tube
    
    Kvantovaya Elektronika, 10:8 (1983),  1699–1700
30. Scanning semiconductor laser with transverse electron-beam pumping
    
    Kvantovaya Elektronika, 6:3 (1979),  603–604


31. Erratum: Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [Quantum Electronics 28 (4) 294 - 296 (1998)]
    
    Kvantovaya Elektronika, 25:6 (1998),  576