Konyaev Vadim Pavlovich

Publications in Math-Net.Ru

1. Semiconductor lasers with improved radiation characteristics
   
   Kvantovaya Elektronika, 52:12 (2022),  1079–1087
2. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
3. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
4. Double integrated laser-thyristor
   
   Kvantovaya Elektronika, 49:11 (2019),  1011–1013
5. Continuous-wave laser diodes based on epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 49:10 (2019),  905–908
6. Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 48:11 (2018),  993–995
7. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
   
   Kvantovaya Elektronika, 43:10 (2013),  895–897
8. Estimation of the reliability of heterolasers subjected to ageing under irradiation by a fast particle flux
   
   Kvantovaya Elektronika, 41:2 (2011),  99–102
9. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
   
   Kvantovaya Elektronika, 40:8 (2010),  697–699
10. 808-nm laser diode bars based on epitaxially stacked double heterostructures
    
    Kvantovaya Elektronika, 40:8 (2010),  682–684
11. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
    
    Kvantovaya Elektronika, 39:8 (2009),  723–726
12. Low-threshold short-cavity diode laser for a miniature atomic clock
    
    Kvantovaya Elektronika, 39:6 (2009),  487–493
13. Double integrated nanostructures for pulsed 0.9-μm laser diodes
    
    Kvantovaya Elektronika, 38:11 (2008),  989–992
14. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
    
    Kvantovaya Elektronika, 32:3 (2002),  213–215
15. Service life of 1-W, 0.985-μm solitary heterolasers
    
    Kvantovaya Elektronika, 31:5 (2001),  417–418
16. Optical loss in strained quantum-well semiconductor ridge lasers
    
    Kvantovaya Elektronika, 30:10 (2000),  878–880
17. Brightness and filamentation of a beam from powerful cw quantum-well In_0.2Ga_0.8As/GaAs lasers
    
    Kvantovaya Elektronika, 30:5 (2000),  401–405
18. Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
    
    Kvantovaya Elektronika, 30:4 (2000),  315–320
19. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction
    
    Kvantovaya Elektronika, 27:1 (1999),  1–2
20. Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
    
    Kvantovaya Elektronika, 25:7 (1998),  647–650
21. Generation of picosecond visible pulses in an inhomogeneously excited (GaIn)P heterolaser
    
    Kvantovaya Elektronika, 23:8 (1996),  699–700
22. Calculation of the ligetime of high-power λ = 0.98 μm heterolasers
    
    Kvantovaya Elektronika, 23:2 (1996),  112
23. Spectral characteristics of single-frequency quantum-well heterolasers
    
    Kvantovaya Elektronika, 21:12 (1994),  1137–1140
24. Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra
    
    Kvantovaya Elektronika, 21:7 (1994),  633–639
25. Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures
    
    Kvantovaya Elektronika, 21:5 (1994),  405–408
26. Narrowing of the angular distribution of the radiation emitted by high-power injection lasers with a wide stripe contact by an external microselector
    
    Kvantovaya Elektronika, 21:1 (1994),  57–58
27. Volume phase diffraction gratings in a KTP crystal
    
    Kvantovaya Elektronika, 18:3 (1991),  396–398
28. Direct pulse-code modulation of high-power heterolaser radiation
    
    Kvantovaya Elektronika, 17:10 (1990),  1383–1384
29. Traveling-wave integrated optical modulator with a working-frequency bandwidth of 4 GHz
    
    Kvantovaya Elektronika, 16:11 (1989),  2319–2322
30. Three-layer waveguide InGaAsP/lnP injection lasers
    
    Kvantovaya Elektronika, 11:3 (1984),  631–633
31. Experimental investigation of dynamic characteristics of injection lasers
    
    Kvantovaya Elektronika, 10:8 (1983),  1592–1598
32. Experimental investigation of inhomogeneously pumped injection lasers
    
    Kvantovaya Elektronika, 10:3 (1983),  652–655
33. Radiative characteristics of injection lasers with short resonators
    
    Kvantovaya Elektronika, 10:2 (1983),  364–370
34. An integrated GaAs distributed-feedback oscillator–amplifier system
    
    Kvantovaya Elektronika, 8:2 (1981),  250–255
35. Characteristics of a channel injection heterojunction laser
    
    Kvantovaya Elektronika, 8:1 (1981),  193–196
36. Injection heterolaser with a short resonator
    
    Kvantovaya Elektronika, 6:2 (1979),  402–404
37. Temporal and spectral characteristics of a distributed–feedback semiconductor laser pumped by an electron beam
    
    Kvantovaya Elektronika, 6:1 (1979),  249–254
38. Coupling radiation out of a distributed-feedback semiconductor laser excited by an electron beam
    
    Kvantovaya Elektronika, 6:1 (1979),  104–108
39. Distributed-feedback semiconductor lasers operating in higher Bragg interaction orders
    
    Kvantovaya Elektronika, 5:12 (1978),  2654–2656
40. Investigation of injection lasers with a wide active region
    
    Kvantovaya Elektronika, 1:5 (1974),  1220–1222