|
|
Publications in Math-Net.Ru
-
A survey of the approaches to storage systems fault detection
St. Petersburg Polytechnical University Journal. Computer Science. Telecommunication and Control Sys, 12:4 (2019), 145–158
-
Analysis of reliability of semiconductor emitters with different designs of cavities
Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 83–88
-
Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode
Kvantovaya Elektronika, 41:5 (2011), 423–426
-
Dual-wavelength laser diodes based on epitaxially stacked heterostructures
Kvantovaya Elektronika, 40:8 (2010), 697–699
-
808-nm laser diode bars based on epitaxially stacked double heterostructures
Kvantovaya Elektronika, 40:8 (2010), 682–684
-
Highly efficient semiconductor optical amplifier for the 820—860-nm spectral range
Kvantovaya Elektronika, 40:4 (2010), 305–309
-
High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
Kvantovaya Elektronika, 39:8 (2009), 723–726
-
High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
Kvantovaya Elektronika, 39:1 (2009), 18–20
-
Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices
Kvantovaya Elektronika, 35:5 (2005), 445–448
-
Single-mode ridge lasers fabricated in an inductively coupled plasma source
Kvantovaya Elektronika, 34:9 (2004), 805–808
-
High-power single-transverse-mode ridge optical waveguide semiconductor lasers
Kvantovaya Elektronika, 32:12 (2002), 1099–1104
-
150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
Kvantovaya Elektronika, 31:8 (2001), 659–660
-
Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region
Kvantovaya Elektronika, 19:10 (1992), 1024–1031
© , 2024