Shishkin Viktor Aleksandrovich

Publications in Math-Net.Ru

1. Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode
   
   Kvantovaya Elektronika, 41:5 (2011),  423–426
2. Highly efficient semiconductor optical amplifier for the 820—860-nm spectral range
   
   Kvantovaya Elektronika, 40:4 (2010),  305–309
3. High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
   
   Kvantovaya Elektronika, 39:1 (2009),  18–20
4. Effect of the energy of ion-chemical etching of GaAs/Al_xGa_1-xAs structures on photoluminescence and degradation of devices
   
   Kvantovaya Elektronika, 35:5 (2005),  445–448
5. Single-mode ridge lasers fabricated in an inductively coupled plasma source
   
   Kvantovaya Elektronika, 34:9 (2004),  805–808
6. 150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
   
   Kvantovaya Elektronika, 31:8 (2001),  659–660
7. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction
   
   Kvantovaya Elektronika, 27:1 (1999),  1–2
8. Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm
   
   Kvantovaya Elektronika, 23:9 (1996),  785–786
9. Single-frequency GaAIAs/GaAs lasers
   
   Kvantovaya Elektronika, 21:3 (1994),  205–208
10. Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region
    
    Kvantovaya Elektronika, 19:10 (1992),  1024–1031