Kurnosov Vladimir Dmitrievich

Publications in Math-Net.Ru

1. Increasing the pump current range of a single-frequency laser diode tuned to the caesium D₂ line
   
   Kvantovaya Elektronika, 51:11 (2021),  970–975
2. Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide
   
   Kvantovaya Elektronika, 50:9 (2020),  816–821
3. On "incorrectness" of the rate equation for photon density of semiconductor lasers
   
   Kvantovaya Elektronika, 50:7 (2020),  688–693
4. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
   
   Kvantovaya Elektronika, 50:6 (2020),  600–602
5. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
   
   Kvantovaya Elektronika, 50:2 (2020),  143–146
6. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
   
   Kvantovaya Elektronika, 49:7 (2019),  649–652
7. AlGaInAs/InP semiconductor lasers with an increased electron barrier
   
   Kvantovaya Elektronika, 49:6 (2019),  519–521
8. Modelling the spectral characteristics of 1.5–1.6 μm high-power asymmetric-waveguide single-mode laser diodes
   
   Kvantovaya Elektronika, 48:9 (2018),  807–812
9. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
   
   Kvantovaya Elektronika, 48:6 (2018),  495–501
10. Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating
    
    Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  438–442
11. Analysis of reliability of semiconductor emitters with different designs of cavities
    
    Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016),  83–88
12. Anomalously high noise levels in a fibre Bragg grating semiconductor laser
    
    Kvantovaya Elektronika, 45:1 (2015),  11–14
13. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
    
    Kvantovaya Elektronika, 44:2 (2014),  149–156
14. Theoretical study of low-frequency noise and amplitude – frequency characteristics of a semiconductor laser with a fiber Bragg grating
    
    Kvantovaya Elektronika, 43:9 (2013),  828–837
15. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode
    
    Kvantovaya Elektronika, 43:9 (2013),  824–827
16. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
    
    Kvantovaya Elektronika, 43:9 (2013),  822–823
17. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
    
    Kvantovaya Elektronika, 43:9 (2013),  819–821
18. Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard
    
    Kvantovaya Elektronika, 41:8 (2011),  692–696
19. Study of the parameters of a single-frequency laser for pumping cesium frequency standards
    
    Kvantovaya Elektronika, 38:4 (2008),  319–324
20. Refractive indices of solid AlGaInAs solutions
    
    Kvantovaya Elektronika, 37:6 (2007),  545–548
21. Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
    
    Kvantovaya Elektronika, 36:10 (2006),  918–924
22. Single-frequency tunable laser for pumping cesium frequency standards
    
    Kvantovaya Elektronika, 36:8 (2006),  741–744
23. Study of the spectral and power characteristics of superluminescent diodes
    
    Kvantovaya Elektronika, 34:1 (2004),  15–19
24. Effect of parasitic elements of a ridge laser on its modulation characteristic
    
    Kvantovaya Elektronika, 33:5 (2003),  425–429
25. Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
    
    Kvantovaya Elektronika, 32:4 (2002),  303–307
26. Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers
    
    Kvantovaya Elektronika, 24:9 (1997),  773–775
27. Spectral characteristics of single-frequency quantum-well heterolasers
    
    Kvantovaya Elektronika, 21:12 (1994),  1137–1140
28. Single-frequency GaAIAs/GaAs lasers
    
    Kvantovaya Elektronika, 21:3 (1994),  205–208
29. Dynamics of emission from a semiconductor laser with an external resonator
    
    Kvantovaya Elektronika, 19:9 (1992),  845–847
30. Strong amplitude modulation of the radiation emitted by buried mesa-structure heterolasers in a frequency band up to 5 GHz
    
    Kvantovaya Elektronika, 17:2 (1990),  218–221
31. Investigation of the characteristics of a single-frequency semiconductor laser with an external resonator
    
    Kvantovaya Elektronika, 17:1 (1990),  40–42
32. Investigation of the width of the emission line of single-frequency GaAlAs injection lasers
    
    Kvantovaya Elektronika, 13:5 (1986),  1070–1072
33. Investigation of low-frequency power fluctuations of AIGaAs injection lasers
    
    Kvantovaya Elektronika, 12:11 (1985),  2370–2373
34. Bistable cw injection heterolaser
    
    Kvantovaya Elektronika, 8:4 (1981),  880–882
35. Investigation of a two-component injection heterojunction laser
    
    Kvantovaya Elektronika, 7:11 (1980),  2489–2491
36. Eight-channel optical fiber communication line between computer units
    
    Kvantovaya Elektronika, 4:7 (1977),  1610–1613
37. Two-resonator quantum-optical systems
    
    Kvantovaya Elektronika, 4:1 (1977),  186–187
38. Investigation of transient stimulated emission from optically coupled lasers
    
    Kvantovaya Elektronika, 3:8 (1976),  1808–1811
39. Injection laser with two strongly coupled resonators
    
    Kvantovaya Elektronika, 1:1 (1974),  35–42


40. Errata to the article: Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
    
    Kvantovaya Elektronika, 32:6 (2002),  564