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Romantsevich Valentina Ivanovna

Publications in Math-Net.Ru

  1. Increasing the pump current range of a single-frequency laser diode tuned to the caesium D2 line

    Kvantovaya Elektronika, 51:11 (2021),  970–975
  2. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide

    Kvantovaya Elektronika, 50:6 (2020),  600–602
  3. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers

    Kvantovaya Elektronika, 50:2 (2020),  143–146
  4. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers

    Kvantovaya Elektronika, 49:7 (2019),  649–652
  5. AlGaInAs/InP semiconductor lasers with an increased electron barrier

    Kvantovaya Elektronika, 49:6 (2019),  519–521
  6. Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers

    Kvantovaya Elektronika, 48:6 (2018),  495–501
  7. Analysis of reliability of semiconductor emitters with different designs of cavities

    Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016),  83–88
  8. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

    Kvantovaya Elektronika, 44:2 (2014),  149–156
  9. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode

    Kvantovaya Elektronika, 43:9 (2013),  824–827
  10. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

    Kvantovaya Elektronika, 43:9 (2013),  822–823
  11. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

    Kvantovaya Elektronika, 43:9 (2013),  819–821
  12. Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard

    Kvantovaya Elektronika, 41:8 (2011),  692–696
  13. Refractive indices of solid AlGaInAs solutions

    Kvantovaya Elektronika, 37:6 (2007),  545–548
  14. Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers

    Kvantovaya Elektronika, 36:10 (2006),  918–924
  15. Study of the spectral and power characteristics of superluminescent diodes

    Kvantovaya Elektronika, 34:1 (2004),  15–19
  16. Effect of parasitic elements of a ridge laser on its modulation characteristic

    Kvantovaya Elektronika, 33:5 (2003),  425–429
  17. Dynamics of emission from an (InGa)AsP heterolaser with two-channel lateral confinement

    Kvantovaya Elektronika, 16:7 (1989),  1329–1332
  18. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates

    Kvantovaya Elektronika, 16:3 (1989),  457–462


© Steklov Math. Inst. of RAS, 2024