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Publications in Math-Net.Ru
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Increasing the pump current range of a single-frequency laser diode tuned to the caesium D2 line
Kvantovaya Elektronika, 51:11 (2021), 970–975
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1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
Kvantovaya Elektronika, 50:6 (2020), 600–602
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Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
Kvantovaya Elektronika, 50:2 (2020), 143–146
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Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
Kvantovaya Elektronika, 49:7 (2019), 649–652
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AlGaInAs/InP semiconductor lasers with an increased electron barrier
Kvantovaya Elektronika, 49:6 (2019), 519–521
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Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers
Kvantovaya Elektronika, 48:6 (2018), 495–501
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Analysis of reliability of semiconductor emitters with different designs of cavities
Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 83–88
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Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
Kvantovaya Elektronika, 44:2 (2014), 149–156
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An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode
Kvantovaya Elektronika, 43:9 (2013), 824–827
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1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
Kvantovaya Elektronika, 43:9 (2013), 822–823
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High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm
Kvantovaya Elektronika, 43:9 (2013), 819–821
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Spectral characteristics of a laser emitter designed for pumping and detecting a reference quantum transition of a caesium frequency standard
Kvantovaya Elektronika, 41:8 (2011), 692–696
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Refractive indices of solid AlGaInAs solutions
Kvantovaya Elektronika, 37:6 (2007), 545–548
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Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers
Kvantovaya Elektronika, 36:10 (2006), 918–924
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Study of the spectral and power characteristics of superluminescent diodes
Kvantovaya Elektronika, 34:1 (2004), 15–19
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Effect of parasitic elements of a ridge laser on its modulation characteristic
Kvantovaya Elektronika, 33:5 (2003), 425–429
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Dynamics of emission from an (InGa)AsP heterolaser with two-channel lateral confinement
Kvantovaya Elektronika, 16:7 (1989), 1329–1332
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Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
Kvantovaya Elektronika, 16:3 (1989), 457–462
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