Vasil'ev Aleksei Petrovich

Publications in Math-Net.Ru

1. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
2. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
3. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
4. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
5. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
6. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
7. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
8. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
9. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
10. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
11. The effect of active region heating on dynamic and power characteristics of quantum cascade lasers emitting at a wavelength of 4.8 $\mu$m at room temperature
    
    Optics and Spectroscopy, 127:3 (2019),  445–448
12. Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1218–1223
13. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
14. Heterobarrier varactors with nonuniformly doped modulation layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  51–54
15. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks
    
    Kvantovaya Elektronika, 49:2 (2019),  187–190
16. Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1337–1345
17. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
18. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
19. Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  466
20. Investigation of the modified structure of a quantum cascade laser
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
21. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
22. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
23. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
24. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
25. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
26. Optimization of the superlattice parameters for THz diodes
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1493–1497
27. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
28. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
29. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1548–1553
30. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
31. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
32. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
33. Stimulated emission from optically pumped quantum dots
    
    Kvantovaya Elektronika, 40:7 (2010),  579–582
34. Optimization of a marine MHD propeller
    
    Prikl. Mekh. Tekh. Fiz., 22:3 (1981),  86–94
35. К вопросу аналогии пузырькового кипения с процессом электролиза морской воды в канале МГД-движителя
    
    TVT, 18:5 (1980),  1116