Petrovskii A V

Publications in Math-Net.Ru

1. High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
   
   Kvantovaya Elektronika, 39:1 (2009),  18–20
2. Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
   
   Kvantovaya Elektronika, 38:2 (2008),  97–102
3. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range
   
   Kvantovaya Elektronika, 35:10 (2005),  909–911
4. Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
   
   Kvantovaya Elektronika, 32:3 (2002),  216–218
5. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
   
   Kvantovaya Elektronika, 32:3 (2002),  213–215


6. Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
   
   Kvantovaya Elektronika, 32:6 (2002),  564