Publications in Math-Net.Ru
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High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
Kvantovaya Elektronika, 39:8 (2009), 723–726
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High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures
Kvantovaya Elektronika, 39:1 (2009), 18–20
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Double integrated nanostructures for pulsed 0.9-μm laser diodes
Kvantovaya Elektronika, 38:11 (2008), 989–992
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Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
Kvantovaya Elektronika, 38:2 (2008), 97–102
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Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range
Kvantovaya Elektronika, 35:10 (2005), 909–911
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