Shapkin Petr Vasil'evich

Publications in Math-Net.Ru

1. Absorption spectra and nonlinear transmission (at $\lambda=2940$ nm) of a diffusion-doped Fe$^{2+}$:ZnSe single crystal
   
   Kvantovaya Elektronika, 45:6 (2015),  521–526
2. Linear and nonlinear transmission of Fe²⁺-doped ZnSe crystals at a wavelength of 2940 nm in the temperature range 20–220 °C
   
   Kvantovaya Elektronika, 44:3 (2014),  213–216
3. Laser radiation of CdS_xSe_1-x targets in a gas diode
   
   Kvantovaya Elektronika, 44:3 (2014),  201–205
4. Fe²⁺ : ZnSe laser pumped by a nonchain electric-discharge HF laser at room temperature
   
   Kvantovaya Elektronika, 44:2 (2014),  141–144
5. Emission of zinc selenide plates excited by a pulsed electric field
   
   Kvantovaya Elektronika, 38:9 (2008),  829–832
6. Superluminescent room-temperature Fe²⁺:ZnSe IR radiation source
   
   Kvantovaya Elektronika, 38:2 (2008),  95–96
7. Features of the explosive boiling up of water irradiated by a Q-switched erbium laser
   
   Kvantovaya Elektronika, 37:12 (2007),  1141–1142
8. Passive Q-switching of an erbium-doped glass laser by using a Co²⁺ : ZnSe crystal
   
   Kvantovaya Elektronika, 37:10 (2007),  974–980
9. Study of the nonlinear transmission of Co²⁺:ZnSe crystals at a wavelength of 1.54 μm
   
   Kvantovaya Elektronika, 34:12 (2004),  1169–1172
10. Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy
    
    Kvantovaya Elektronika, 25:4 (1998),  305–307
11. Exciton piezospectroscopy of semiconductor solirl solutions with the sphalerite - wiirtzite structural phase transition
    
    Fizika Tverdogo Tela, 33:4 (1991),  1077–1085
12. Exciton mechanisms in the radiative processes of perfect semiconductor solid solutions $(\mathrm{Zn}_{x}\mathrm{Cd}_{1-x}\mathrm{Se},0<x<1)$
    
    Fizika Tverdogo Tela, 31:10 (1989),  70–78
13. Streamer zinc sulfide laser
    
    Kvantovaya Elektronika, 15:9 (1988),  1764–1766
14. Waveguide Bragg light modulators made of CdS_xSe_1–x crystals
    
    Kvantovaya Elektronika, 13:4 (1986),  698–703
15. $\mathrm{Te}_{n}$-clusters–centers of effective radiative recombination in $\mathrm{ZnSe}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.2)$
    
    Fizika Tverdogo Tela, 27:6 (1985),  1734–1741
16. Fabrication and investigation of integrated-optics CdS_xSe_1–x waveguides
    
    Kvantovaya Elektronika, 12:9 (1985),  1814–1818
17. Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers
    
    Kvantovaya Elektronika, 12:6 (1985),  1307–1309
18. Single crystals of ZnSe_1–xTe_x, Zn_1–xCd_xSe, and Zn_xCd_1–xS solid solutions for electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 12:5 (1985),  1113–1116
19. Ultraviolet ZnS semiconductor laser pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 11:3 (1984),  618–621
20. Fabrication and investigation of thin-film CdS_xSe_1–x waveguides
    
    Kvantovaya Elektronika, 9:11 (1982),  2329–2330
21. Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 9:10 (1982),  2099–2102
22. Optically controlled deflector based on a thin-film waveguide
    
    Kvantovaya Elektronika, 6:7 (1979),  1580–1582
23. Investigation of the dependence of the radiative properties of cadmium sulfide single crystals on the equilibrium carrier density
    
    Kvantovaya Elektronika, 5:3 (1978),  642–646
24. Determination of the depth of the disturbed layer in laser screens made of cadmium sulfide single crystals
    
    Kvantovaya Elektronika, 4:6 (1977),  1357–1359
25. Laser screens made of single-crystal CdS, CdS_xSe_1–x, and ZnSe ingots
    
    Kvantovaya Elektronika, 4:2 (1977),  351–354
26. Photoluminescence and gain of CdS and CdSe single crystals under electron-beam excitation conditions
    
    Kvantovaya Elektronika, 1:3 (1974),  653–659
27. Cadmium sulfide single crystals suitable for electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 1972, no. 7,  44–47


28. Erratum: Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [Quantum Electronics 28 (4) 294 - 296 (1998)]
    
    Kvantovaya Elektronika, 25:6 (1998),  576