Sabitov Damir Ravil'evich

Publications in Math-Net.Ru

1. New high-reliability optical transmission modules based on powerful superluminescent diodes in the spectral range 1.5 – 1.6 μm
   
   Kvantovaya Elektronika, 53:7 (2023),  561–564
2. Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes
   
   Kvantovaya Elektronika, 52:6 (2022),  577–579
3. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
   
   Kvantovaya Elektronika, 52:2 (2022),  179–181
4. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
5. Investigation into the internal electric-field strength in the active region of InGaN/GaN-based LED structures with various numbers of quantum wells by electrotransmission spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  420–425
6. Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  292–295
7. Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
   
   Kvantovaya Elektronika, 50:9 (2020),  830–833
8. Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
   
   Kvantovaya Elektronika, 45:7 (2015),  601–603
9. Broadband near-IR double quantum-well heterostructure superluminescent diodes
   
   Kvantovaya Elektronika, 38:8 (2008),  744–746
10. Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
    
    Kvantovaya Elektronika, 38:2 (2008),  97–102