Akimova Irina Vasil'evna

Publications in Math-Net.Ru

1. Amplitude/phase modulation and spectrum of the vertical-cavity surface-emitting laser output
   
   Kvantovaya Elektronika, 47:9 (2017),  835–841
2. Radiation parameters of ridge lasers at high pump currents
   
   Kvantovaya Elektronika, 38:11 (2008),  993–1000
3. Quality of the optical beam of a high-power, single-mode, 0.81-μm ridge AlGaAs heterolaser
   
   Kvantovaya Elektronika, 35:6 (2005),  515–519
4. High-temperature properties of InGaN light-emitting diodes
   
   Kvantovaya Elektronika, 25:11 (1998),  1013–1016
5. Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
   
   Kvantovaya Elektronika, 25:7 (1998),  647–650
6. Emission from quantum-well InGaAs structures
   
   Kvantovaya Elektronika, 25:3 (1998),  206–210
7. Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents
   
   Kvantovaya Elektronika, 23:12 (1996),  1069–1071
8. Power hysteresis and waveguide bistability of stripe quantum-well InGaAs\/GaAs\/GaAIAs heterolasers with a strained active layer
   
   Kvantovaya Elektronika, 22:4 (1995),  309–320
9. Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures
   
   Kvantovaya Elektronika, 21:5 (1994),  405–408
10. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
    
    Kvantovaya Elektronika, 16:3 (1989),  457–462
11. Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range
    
    Kvantovaya Elektronika, 14:1 (1987),  204–205
12. $\mathrm{Te}_{n}$-clusters–centers of effective radiative recombination in $\mathrm{ZnSe}_{1-x}\mathrm{Te}_{x}(x\leqslant 0.2)$
    
    Fizika Tverdogo Tela, 27:6 (1985),  1734–1741
13. Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers
    
    Kvantovaya Elektronika, 12:6 (1985),  1307–1309
14. Improvement of the characteristics of ZnSe single-crystal semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 9:10 (1982),  2099–2102
15. Determination of the depth of the disturbed layer in laser screens made of cadmium sulfide single crystals
    
    Kvantovaya Elektronika, 4:6 (1977),  1357–1359