Publications in Math-Net.Ru
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High-power laser diode arrays based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs quantum-well heterostructures
Kvantovaya Elektronika, 53:8 (2023), 667–671
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Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)
Kvantovaya Elektronika, 52:2 (2022), 179–181
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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Kvantovaya Elektronika, 50:5 (2020), 489–492
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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Kvantovaya Elektronika, 47:8 (2017), 693–695
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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
Kvantovaya Elektronika, 47:4 (2017), 291–293
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AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
Kvantovaya Elektronika, 43:10 (2013), 895–897
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