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Publications in Math-Net.Ru
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Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers
Kvantovaya Elektronika, 53:8 (2023), 641–644
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Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 - 5 μm emission wavelength
Kvantovaya Elektronika, 53:5 (2023), 370–373
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Semiconductor lasers with improved radiation characteristics
Kvantovaya Elektronika, 52:12 (2022), 1079–1087
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Triple integrated laser–thyristor
Kvantovaya Elektronika, 50:11 (2020), 1001–1003
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Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K
Kvantovaya Elektronika, 50:8 (2020), 710–713
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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Kvantovaya Elektronika, 50:5 (2020), 489–492
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Double integrated laser-thyristor
Kvantovaya Elektronika, 49:11 (2019), 1011–1013
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AlGaInAs/InP semiconductor lasers with an increased electron barrier
Kvantovaya Elektronika, 49:6 (2019), 519–521
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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
Kvantovaya Elektronika, 48:11 (2018), 993–995
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A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm
Kvantovaya Elektronika, 48:5 (2018), 472–475
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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Kvantovaya Elektronika, 47:8 (2017), 693–695
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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
Kvantovaya Elektronika, 47:4 (2017), 291–293
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Analysis of reliability of semiconductor emitters with different designs of cavities
Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 83–88
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Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD
Kvantovaya Elektronika, 46:5 (2016), 447–450
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Study of the spectral and power characteristics of superluminescent diodes
Kvantovaya Elektronika, 34:1 (2004), 15–19
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Effect of parasitic elements of a ridge laser on its modulation characteristic
Kvantovaya Elektronika, 33:5 (2003), 425–429
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150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics
Kvantovaya Elektronika, 31:8 (2001), 659–660
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