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Khrebtov Artyom Igorevich

Publications in Math-Net.Ru

  1. Nonlinear bleaching of InAs nanowires in the visible range

    Optics and Spectroscopy, 128:1 (2020),  128–133
  2. The significance of fitting in the description of luminescence kinetics of hybrid nanowires

    Optics and Spectroscopy, 128:1 (2020),  122–127
  3. Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ÒÎÐÎ-CdSe/ZnS quantum dots

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  952–957
  4. Nonradiative energy transfer in hybrid nanostructures with varied dimensionality

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1289–1292
  5. Photodynamics of nonlinear effects of picosecond laser action on CdSe/ZnS QDs colloidal solutions

    Optics and Spectroscopy, 125:5 (2018),  658–663
  6. The influence of polyvinylpyrrolidone molecular weight on the structure and the spectral and nonlinear optical properties of composite materials with CdS/ZnS nanoparticles

    Optics and Spectroscopy, 125:5 (2018),  608–614
  7. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
  8. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
  9. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
  10. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
  11. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
  12. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
  13. Directional emission from beryllium doped GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
  14. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
  15. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
  16. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
  17. The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  49–55
  18. Radical-ion mechanism of optical limiting in fullerene solutions

    Kvantovaya Elektronika, 34:5 (2004),  407–411


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