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Pavlov Sergei Gennad'evich

Publications in Math-Net.Ru

  1. Thermal activation of valley-orbit states of neutral magnesium in silicon

    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  500
  2. Optical cross sections and oscillation strengths of magnesium double donor in silicon

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  299–303
  3. Relaxation of the excited states of arsenic in strained germanium

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149
  4. Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821
  5. Relaxation times and population inversion of excited states of arsenic donors in germanium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019),  677–682
  6. Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1285–1288
  7. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
  8. Low-temperature intracenter relaxation times of shallow donors in germanium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017),  555–560
  9. Polarization of the induced THz emission of donors in silicon

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705
  10. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

    Kvantovaya Elektronika, 45:2 (2015),  113–120
  11. Tunable narrowband laser that operates on interband transitions of hot holes in germanium

    Kvantovaya Elektronika, 20:2 (1993),  142–148
  12. External Bragg selection in a hot-hole germanium semiconductor laser

    Kvantovaya Elektronika, 17:10 (1990),  1303–1305


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