Sverdlov B N

Publications in Math-Net.Ru

1. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
   
   Kvantovaya Elektronika, 16:3 (1989),  457–462
2. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
   
   Kvantovaya Elektronika, 15:11 (1988),  2171–2172
3. CONTINUOUS GENERATION AND HIGH-TEMPERATURE LASER TESTS UNDER 100-DEGREES-C BASED ON INGAASP/INP
   
   Zhurnal Tekhnicheskoi Fiziki, 57:8 (1987),  1570–1574
4. Fast degradation defects on reflecting faces of InGaAsP/lnP lasers emitting in the 1.3 μ range
   
   Kvantovaya Elektronika, 14:1 (1987),  204–205
5. Injection InGaSbAs laser emitting at 2.4μ (300K)
   
   Kvantovaya Elektronika, 13:10 (1986),  2119–2120
6. Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion
   
   Kvantovaya Elektronika, 13:8 (1986),  1610–1616
7. Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and wattampere characteristic
   
   Kvantovaya Elektronika, 13:8 (1986),  1603–1609
8. Light-emission and degradation characteristics of InGaAsP/lnP heterostructures
   
   Kvantovaya Elektronika, 13:7 (1986),  1376–1380
9. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
   
   Kvantovaya Elektronika, 12:6 (1985),  1309–1311
10. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
11. Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression
    
    Kvantovaya Elektronika, 11:8 (1984),  1665–1667
12. Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К
    
    Kvantovaya Elektronika, 11:4 (1984),  645–646
13. Three-layer waveguide InGaAsP/lnP injection lasers
    
    Kvantovaya Elektronika, 11:3 (1984),  631–633
14. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
    
    Kvantovaya Elektronika, 9:9 (1982),  1902–1904
15. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range
    
    Kvantovaya Elektronika, 9:9 (1982),  1749
16. Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs
    
    Kvantovaya Elektronika, 8:9 (1981),  1994–1996
17. Service life of GalnPAs/lnP heterostructures
    
    Kvantovaya Elektronika, 8:9 (1981),  1985–1987
18. Injection $GaInPAs/InP$ heterojunction laser with $6-7^\circ$ output divergence, emitting nonwaveguide modes
    
    Kvantovaya Elektronika, 7:11 (1980),  2487–2488
19. Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:9 (1980),  1990–1992
20. Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:1 (1980),  91–96
21. High-efficiency GaInPAs/InP light-emitting diodes
    
    Kvantovaya Elektronika, 5:11 (1978),  2488–2489
22. Injection heterolaser based on InGaAsSb four-component solid solution
    
    Kvantovaya Elektronika, 5:3 (1978),  703–704
23. Luminescence and stimulated emission from Ga_xln_1–xAs_ySb_1–y
    
    Kvantovaya Elektronika, 3:4 (1976),  932–934
24. New uncooled injection heterolaser emitting in the 1.5–1.8 μ range
    
    Kvantovaya Elektronika, 3:2 (1976),  465–466
25. Heterojunction lasers made of Ga_xIn_1–xAs_yP_1–y and Al_xGa_1–xSb_yAs_1–y solid solutions
    
    Kvantovaya Elektronika, 1:10 (1974),  2294–2295
26. Anomalous interaction of spectral modes in a semiconductor laser
    
    Kvantovaya Elektronika, 1:10 (1974),  2286–2288
27. Injection laser with a diffraction grating in its resonator
    
    Kvantovaya Elektronika, 1:5 (1974),  1145–1149