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Publications in Math-Net.Ru
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LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY
METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 31–34
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DOUBLE PUMPING OF INGAASP/GAAS-BASED YAG-LASERS (P1.06=320 MV,
EFFICIENCY-12-PERCENT)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 15–21
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SPECTRAL CHARACTERISTICS OF INGAASP/GAAS(111) LPE-LASERS
(LAMBDA=0.8MU-M) DESIGNED FOR THE PUMPING OF YAG-ND3+
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 45–49
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Garnet chip laser pumped by an InGaAsP/GaAs laser
Kvantovaya Elektronika, 16:12 (1989), 2423–2425
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Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные
МОС гидридным методом. Квантовый выход люминесценции и пороги генерации
Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2111–2117
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Квантово-размерные
InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения
(${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)
Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1031–1034
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Свойства эпитаксиальных слоев арсенида галлия, легированных
редкоземельными элементами
Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 147–150
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POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR
(IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 699–702
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Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 552–557
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Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 535–537
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Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method
($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 372–374
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