Aleksanyan A G

Publications in Math-Net.Ru

1. Laser deposition and optical investigation of thin Ga_xIn_1–xAs_ySb_1–y films of various compositions
   
   Kvantovaya Elektronika, 15:1 (1988),  181–183
2. Influence of the eiectron–phonon interaction on an inverted population in a semiconductor superlattice and a semiconductor size-quantized film in a magnetic field
   
   Kvantovaya Elektronika, 12:4 (1985),  837–839
3. Semiconductor laser utilizing transitions between size-quantization levels with separate electron and optical confinement
   
   Kvantovaya Elektronika, 11:9 (1984),  1885–1887
4. Quantum size effects in a periodic InSb–GaAs structure and in Ga_xln_1–xAs_ySb_1–y films prepared by laser evaporation
   
   Kvantovaya Elektronika, 11:6 (1984),  1264–1266
5. Semiconductor laser made of Bi_1–xSb_x
   
   Kvantovaya Elektronika, 11:3 (1984),  492–496
6. Generation of electromagnetic oscillations in metal–barrier–metal–barrier–metal structures
   
   Kvantovaya Elektronika, 9:8 (1982),  1700–1702
7. Feasibility of developing a tunable oscillator utilizing a system of metal–barrier–metal–barrier–metal junctions
   
   Kvantovaya Elektronika, 8:5 (1981),  1069–1072
8. Harmonic generation in metal–barrier–metal junctions
   
   Kvantovaya Elektronika, 8:2 (1981),  395–398
9. Semiconductor laser with transitions between magnetoacoustic subbands
   
   Kvantovaya Elektronika, 8:1 (1981),  185–188
10. Gain of electromagnetic radiation traveling in a semiconductor subjected to magnetic and ultrasonic fields
    
    Kvantovaya Elektronika, 6:8 (1979),  1786–1789
11. Semiconductor laser utilizing intraband transitions between magnetic-film levels
    
    Kvantovaya Elektronika, 2:8 (1975),  1648–1653
12. Spectral dependence of negative photoconductivity
    
    Kvantovaya Elektronika, 1:8 (1974),  1693–1699
13. Theory of the gain of semiconductor lasers
    
    Kvantovaya Elektronika, 1:1 (1974),  62–68
14. Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors
    
    Kvantovaya Elektronika, 1973, no. 5(17),  117–119
15. Optical gain of heavily doped semiconductors
    
    Kvantovaya Elektronika, 1972, no. 2(8),  77–83
16. Influence of impurity concentration on the threshold characteristics of semiconductor lasers
    
    Kvantovaya Elektronika, 1971, no. 3,  15–22